Lead Device Characterization Engineer, Advanced Memory

Micron Technology; Boise (ID); On-site; USD 120,000 - 180,000; Full time

Job summary

The TD Electrical Device Characterization team at Micron is where deep device physics meets real product impact. We work at the groundbreaking edge of DRAM and emerging memory technologies, partnering closely across build, process, and systems teams to develop what ships next.

If you enjoy turning complex measurements into insight and influence, this is a place to do your best work. In this role, you will lead electrical characterization for advanced memory devices, driving new methods from

Qualifications

• MS or PhD in Electrical Engineering or related field.
• Strong semiconductor device physics and electrical characterization for DRAM and memory architectures.
• Experience with reliability characterization and time-zero baseline establishment.
• Hands-on use of parametric test equipment and wafer-level or ATE systems.
• Proficiency in C/C++, Python, and AI/LLM-based automation tools.

Responsibilities

• Lead electrical characterization of advanced DRAM and emerging memory devices
• Develop and scale characterization methodologies, models, and standards
• Design and automate test flows, data pipelines, and analysis tools
• Investigate device behavior, reliability mechanisms, and root causes
• Collaborate across functions and present technical findings with clarity

Skills

C/C++

Python

AI/LLM tools

Education

MS or PhD in Electrical Engineering or related field

Tools

Parametric test equipment

Wafer-level testing

Automated test equipment (ATE)

Job description

The TD Electrical Device Characterization team at Micron is where deep device physics meets real product impact. We work at the groundbreaking edge of DRAM and emerging memory technologies, partnering closely across build, process, and systems teams to develop what ships next.

If you enjoy turning complex measurements into insight and influence, this is a place to do your best work. In this role, you will lead electrical characterization for advanced memory devices, driving new methods from