A prestigious university in Raleigh, North Carolina seeks a Wide-Bandgap Power Device Engineer. The role involves designing GaN power devices, integrating processes, and collaborating with an experienced team to drive innovations in semiconductor technology. Candidates should hold a Ph.D. or M.S. in Electrical Engineering, have at least 3 years of relevant experience, and excel in technical communication. Competitive compensation and comprehensive benefits are offered, contributing to a collaborative work environment focused on advanced semiconductor research.
Qualifications
3+ years of experience in GaN power device design and process integration.
Track record of publications in high-quality journals and/or conferences.
Strong background in semiconductor physics and electrical characterization.
Comfort in collaborating with students, faculty, and staff of varying experience.
Responsibilities
Design and optimize GaN power devices for high-voltage applications.
Lead the wafer process flow development including etching and metallization.
Define and execute device characterization plans for reliability assessment.
Collaborate with circuit designers and product development teams.
Skills
Power semiconductor device design
Electrical characterization
Process integration
GaN technology proficiency
Excellent communication
Education
Ph.D. or M.S. in Electrical Engineering
Tools
TCAD simulation tools (e.g., Synopsys, Silvaco)
Job description
A prestigious university in Raleigh, North Carolina seeks a Wide-Bandgap Power Device Engineer. The role involves designing GaN power devices, integrating processes, and collaborating with an experienced team to drive innovations in semiconductor technology. Candidates should hold a Ph.D. or M.S. in Electrical Engineering, have at least 3 years of relevant experience, and excel in technical communication. Competitive compensation and comprehensive benefits are offered, contributing to a collaborative work environment focused on advanced semiconductor research.