GaN-on-SiC RF Process Development Intern

MACOM; Durham (NC); Hybrid; USD 11,847,000 - 18,515,000; Full time

Job summary

MACOM in Durham, NC invites applications for a Semiconductor Process Development Intern focused on GaN on SiC HEMT technology. You will work with experienced RF Technology Development engineers, gaining hands-on fab experience and presenting results during a 12-week program.

Ideal candidates are enrolled in a BS/MS/PhD program in Electrical Engineering, Materials Science or related STEM fields with strong data analysis skills (Excel/JMP) and basic semiconductor processing familiarity.

Qualifications

• Pursuing BS/MS/PhD in STEM fields (Electrical Engineering, Materials Science, Chemical Engineering or related).
• Strong data analysis capability using Excel/JMP.
• Hands-on clean room experience preferred or coursework with semiconductor processing.

Responsibilities

• Work with RF Technology Development engineers on key projects.
• Gain hands-on FAB experience and communicate results to panels.
• Attend intern activities: webinars, networking events and poster sessions.
• Receive formal feedback and progress opportunities during the 12-week program.

Skills

Data analysis

Excel

JMP

Clean room

Communication

Independent work

Education

Bachelor's/Master's/PhD in Electrical Engineering or Materials Science

Job description

MACOM in Durham, NC invites applications for a Semiconductor Process Development Intern focused on GaN on SiC HEMT technology. You will work with experienced RF Technology Development engineers, gaining hands-on fab experience and presenting results during a 12-week program.

Ideal candidates are enrolled in a BS/MS/PhD program in Electrical Engineering, Materials Science or related STEM fields with strong data analysis skills (Excel/JMP) and basic semiconductor processing familiarity.