Director, Ultra-High-Voltage SiC Device Technology

Navitas Semiconductor Ltd.; Torrance (CA); Remote; USD 200,000 - 250,000; Full time

Job summary

Navitas Semiconductor Ltd. in Torrance, CA seeks a Director of Ultra-High-Voltage SiC Device Technology to guide device architecture, process technology, and qualification from 3.3 kV to 10 kV+. The role leads government-funded programs as technical lead and PI, collaborating with foundries and research partners to translate concepts from simulation to silicon.

You will mentor engineers across U.S. and India, drive IP via patents/publications, and align with customers on HV product definitions.

Qualifications

• PhD in Electrical Engineering, Physics, or Materials Science.
• 12+ years R&D in SiC power devices, ultra-high-voltage focus.
• Experience as technical lead on externally funded programs.
• Proven publications or patents in SiC power devices.

Responsibilities

• Lead ultra-high-voltage device technology for 3.3 kV to 10 kV+ (MOSFETs, PiN diodes, JFETs, IGBTs).
• Serve as technical lead and principal investigator on U.S. government-funded programs.
• Define process flows with foundry and research partners; drive split-lot experiments.
• Direct TCAD simulations, mask reviews, and characterization plans.
• Establish HV characterization and reliability methods (HTRB, HTGB, avalanche).
• Mentor device engineers across U.S. and India sites.
• Support IP development and engagement with customers.

Skills

SiC device physics

TCAD-driven design

High-voltage devices

Leadership

Foundry collaboration

Publications & patents

Education

PhD in EE/Physics/Materials

Tools

SiC fabrication tools

Job description

# Director, Ultra-High-Voltage SiC Device TechnologyFully Remote • Torrance, CA 90503## OverviewSalary Range$200,000.00 - $250,000.00 Salary/yearPosition TypeFull Time## Description**Job Purpose:**Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.With more than 30 years of combined expertise in wide bandgap technologies, GaNFastTM power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiCTM high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. We are seeking a Director of Ultra-High-Voltage SiC Device Technology to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.The Director of Ultra-High-Voltage SiC Device Technology reports to the SVP & Chief Technology Officer and owns device and process technology for our ultra-high-voltage SiC roadmap, from 3.3 kV to 10 kV and beyond: MOSFETs, PiN diodes, JFETs and bipolar devices. The director leads U.S. government-funded technology programs as technical lead and principal investigator, and works hands-on with foundry and research partners to take new device concepts from simulation to qualified silicon.**Key Responsibilities and Duties:*** **Ultra-High-Voltage Device Technology:** Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV to 10 kV+), including MOSFETs, PiN diodes, JFETs and IGBTs or other bipolar devices.* **Government Program Leadership:** Serve as technical lead and principal investigator on U.S. government-funded development programs: define technical plans, own deliverables and milestones, and represent Navitas in program reviews.* **Process Integration with Partners:** Define process flows and key modules (implantation and activation, gate oxide, ohmic contacts, edge termination, passivation) with foundry and research partners, and drive split-lot experiments to closure.* **Design, Simulation and Characterization:** Direct device simulation (TCAD), mask design reviews and characterization plans, and translate results into design and process changes.* **Reliability and Test Methods:** Establish ultra-high-voltage characterization and reliability methods (HTRB, HTGB, avalanche and short-circuit ruggedness) with the reliability and test teams.* **Team Development:** Mentor device engineers across U.S. and India sites, and help grow the ultra-high-voltage SiC team.* **IP and Customer Engagement:** Build Navitas' intellectual property through patents and selected publications, and support customers and business units on ultra-high-voltage product definition.**Knowledge, Skills, Abilities, and Other Characteristics (KSAO’s)*** Deep understanding of SiC device physics for blocking voltages from 3.3 kV to 10 kV+, including drift-layer design, edge termination and bipolar degradation* Strong knowledge of SiC process modules: implantation and activation, gate oxidation, ohmic contacts, etching and passivation* TCAD-driven device design and disciplined, data-driven experiment planning* Familiarity with high-voltage test and reliability methods (HTRB, HTGB, avalanche, short circuit)* Strong analytical and problem-solving skills* Excellent technical writing and communication, including proposals and government program reporting* Comfortable working with foundries, research institutes and teams across global time zones* Leading by example## Qualifications**Required Qualifications*** Ph.D. in Electrical Engineering, Physics, Materials Science or a related field.* 12+ years of industrial or national-lab research and development in SiC power devices, with a focus on ultra-high-voltage switches.* Demonstrated design, fabrication and characterization of SiC devices rated 3.3 kV or above, such as MOSFETs, BJTs, IGBTs, thyristors or PiN diodes.* Hands-on depth in SiC process technology: implantation, oxidation, ohmic contacts, etching and edge termination.* Experience as technical lead or principal investigator on externally funded programs, including proposals, reporting and milestone delivery.* A strong record of publications and/or patents in SiC power devices.* Must be a U.S. person (see Export Control below).**Preferred Qualifications*** Experience with SiC integrated circuits or high-temperature SiC electronics.* Experience with bipolar SiC devices and their reliability, such as bipolar degradation and basal plane dislocation control.* Experience with U.S. Department of Defense or Department of Energy programs.* Experience transferring device technology to a commercial 150 mm or 200 mm SiC foundry.* Experience leading engineers across multiple sites and time zones.**What We Offer*** **A front-row seat to the future of power electronics.** Work on cutting-edge GaN and SiC technologies that are transforming AI data centers, electrification, and global energy infrastructure.* **A fast-paced, high-energy environment**. We move quickly, make decisions with purpose, and empower employees to take ownership and drive real impact from day one.* **A team that shows up and delivers.** We care deeply about our mission, our customers, and each other. We collaborate, support one another, and bring intensity and accountability to everything we do.* **Full support to succeed.** You’ll have access to leadership, cross-functional collaboration, and the resources needed to innovate and execute at a high level.* **Competitive total rewards.** Comprehensive health, dental, and vision coverage, unlimited PTO, and a competitive compensation package including base salary, performance bonus, and equity awards.**Base Salary Range:**$200,000 - $250,000 depending on experience**Export Control:**This position requires access to technology and technical data controlled under the International Traffic in Arms Regulations (ITAR) and the Export Administration Regulations (EAR). Applicants must be U.S. persons: U.S. citizens, U.S. lawful permanent residents, or protected individuals under 8 U.S.C. 1324b(a)(3).**Equal Opportunity:**Navitas is an equal opportunity employer. We consider all qualified applicants without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, veteran status, or any other characteristic protected by law.