Director, Ultra-High-Voltage SiC Device Technology

Navitas Semiconductor; Torrance (CA); On-site; USD 200,000 - 250,000; Full time

Benefits offered by this job

Health, dental, and vision coverage

Unlimited PTO

Equity awards

Competitive compensation package

Job summary

Navitas Semiconductor seeks a seasoned R&D leader in SiC HV devices to drive ultra-high-voltage technology from 3.3 kV to 10 kV+. You will guide device architecture, process integration with partners, and reliability methods while mentoring engineers across multiple sites.

You will lead government-funded programs, translate TCAD results into design changes, and contribute to IP through publications and patents, advancing Navitas' power-electronics portfolio for AI data centers and

Qualifications

• Ph.D. in Electrical Engineering, Physics, Materials Science or related field.
• 12+ years of industrial or national-lab R&D in SiC power devices, ultra-high-voltage switches.
• Proven design, fabrication and characterization of SiC devices rated 3.3 kV or above.
• Hands-on depth in SiC process technology: implantation, oxidation, contacts, etching, edge termination.
• Experience as technical lead or PI on externally funded programs with milestones.
• Strong publication and/or patent record in SiC power devices.
• Must be a U.S. person.

Responsibilities

• Lead device architecture and process technology for ultra-high-voltage SiC devices.
• Serve as technical lead on U.S. government-funded development programs.
• Define process flows with foundry and research partners; manage split-lot experiments.
• Direct device simulation, mask design reviews and characterization plans.
• Establish ultra-high-voltage characterization and reliability methods.
• Mentor device engineers across U.S. and India sites.
• Develop IP and support customers on ultra-high-voltage product definition.

Skills

SiC device physics

Edge termination design

TCAD-driven design

High-voltage test methods

Academic publication writing

Leadership & mentoring

Education

Ph.D. in Electrical Engineering or related field

Tools

TCAD

HV measurement equipment

Job description

Job Purpose

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

Key Responsibilities And Duties

• Ultra-High-Voltage Device Technology: Lead device architecture and process technology for ultra-high-voltage SiC devices (3.3 kV to 10 kV+), including MOSFETs, PiN diodes, JFETs and IGBTs or other bipolar devices.
• Government Program Leadership: Serve as technical lead and principal investigator on U.S. government-funded development programs: define technical plans, own deliverables and milestones, and represent Navitas in program reviews.
• Process Integration with Partners: Define process flows and key modules (implantation and activation, gate oxide, ohmic contacts, edge termination, passivation) with foundry and research partners, and drive split-lot experiments to closure.
• Design, Simulation and Characterization: Direct device simulation (TCAD), mask design reviews and characterization plans, and translate results into design and process changes.
• Reliability and Test Methods: Establish ultra-high-voltage characterization and reliability methods (HTRB, HTGB, avalanche and short-circuit ruggedness) with the reliability and test teams.
• Team Development: Mentor device engineers across U.S. and India sites, and help grow the ultra-high-voltage SiC team.
• IP and Customer Engagement: Build Navitas' intellectual property through patents and selected publications, and support customers and business units on ultra-high-voltage product definition.

Knowledge, Skills, Abilities, And Other Characteristics (KSAO’s)

• Deep understanding of SiC device physics for blocking voltages from 3.3 kV to 10 kV+, including drift-layer design, edge termination and bipolar degradation
• Strong knowledge of SiC process modules: implantation and activation, gate oxidation, ohmic contacts, etching and passivation
• TCAD-driven device design and disciplined, data-driven experiment planning
• Familiarity with high-voltage test and reliability methods (HTRB, HTGB, avalanche, short circuit)
• Strong analytical and problem-solving skills
• Excellent technical writing and communication, including proposals and government program reporting
• Comfortable working with foundries, research institutes and teams across global time zones
• Leading by example

Qualifications

Required Qualifications

• Ph.D. in Electrical Engineering, Physics, Materials Science or a related field.
• 12+ years of industrial or national-lab research and development in SiC power devices, with a focus on ultra-high-voltage switches.
• Demonstrated design, fabrication and characterization of SiC devices rated 3.3 kV or above, such as MOSFETs, BJTs, IGBTs, thyristors or PiN diodes.
• Hands-on depth in SiC process technology: implantation, oxidation, ohmic contacts, etching and edge termination.
• Experience as technical lead or principal investigator on externally funded programs, including proposals, reporting and milestone delivery.
• A strong record of publications and/or patents in SiC power devices.
• Must be a U.S. person (see Export Control below).

Preferred Qualifications

• Experience with SiC integrated circuits or high-temperature SiC electronics.
• Experience with bipolar SiC devices and their reliability, such as bipolar degradation and basal plane dislocation control.
• Experience with U.S. Department of Defense or Department of Energy programs.
• Experience transferring device technology to a commercial 150 mm or 200 mm SiC foundry.
• Experience leading engineers across multiple sites and time zones.

What We Offer

• A front-row seat to the future of power electronics. Work on cutting-edge GaN and SiC technologies that are transforming AI data centers, electrification, and global energy infrastructure.
• A fast-paced, high-energy environment. We move quickly, make decisions with purpose, and empower employees to take ownership and drive real impact from day one.
• A team that shows up and delivers. We care deeply about our mission, our customers, and each other. We collaborate, support one another, and bring intensity and accountability to everything we do.
• Full support to succeed. You’ll have access to leadership, cross-functional collaboration, and the resources needed to innovate and execute at a high level.
• Competitive total rewards. Comprehensive health, dental, and vision coverage, unlimited PTO, and a competitive compensation package including base salary, performance bonus, and equity awards.

Base Salary Range

$200,000 - $250,000 depending on experience

Export Control

This position requires access to technology and technical data controlled under the International Traffic in Arms Regulations (ITAR) and the Export Administration Regulations (EAR). Applicants must be U.S. persons: U.S. citizens, U.S. lawful permanent residents, or protected individuals under 8 U.S.C. 1324b(a)(3).

Equal Opportunity

Navitas is an equal opportunity employer. We consider all qualified applicants without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, veteran status, or any other characteristic protected by law.