BiCMOS SiGeC HBT RF Device Engineer

Texas Instruments

Dallas (TX)

On-site

USD 110,000 - 170,000

Full time

14 days+

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Job summary

Texas Instruments is seeking a Process Development Engineer to lead development, characterization and optimization of BiCMOS SiGeC devices for volume production in our advanced technology group in Dallas. You will drive TCAD simulations, design of experiments, and RF/DC characterization, collaborating across process, integration, reliability, packaging and circuit teams.

The ideal candidate has a Masters in EE or Physics with 10+ years in SiGe HBT device engineering, strong device physics and

Qualifications

Master's degree in Electrical Engineering or Physics.
10+ years of professional experience as a Device/PI engineer working with SiGe HBT devices.
Strong device physics and semiconductor device engineering background.
Industry experience in developing SiGe:C HBT transistors for RF/mm-wave applications.

Responsibilities

Develop new processes and components to enable next generation BICMOS SiGeC technologies.
Drive the TCAD simulation (process and device simulation, HF simulations), design of experiments, RF and DC characterization, and data analysis of key components.
Work with multiple process, integration, reliability, packaging, circuit design and test engineers to achieve these goals.
Work closely with the product groups to identify and optimize the BICMOS component performance to meet critical final device parameters to enable game changing products in the market.
Work across different development groups; process flow, device design, modelling, simulation, reliability, etc.