RF Device Engineer - TCAD, SiGe & RF CMOS

GLOBALFOUNDRIES U.S. 2 LLC; Essex Junction (VT); On-site; USD 98,000 - 176,000; Full time

Job summary

GlobalFoundries in Essex Junction, VT seeks a senior specialist for TCAD simulations, device design and DC/RF characterization of SiGe HBTs and RF CMOS devices. You will optimize performance, benchmark against state-of-the-art results, and partner with process integration to enable fabrication initiatives.

The role demands 3+ years in semiconductor device analysis, strong data analytics, English fluency, and willingness to relocate to Essex Junction, VT.

Qualifications

• Education: Master’s Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline.
• BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years.
• 3+ years in semiconductor device analysis and TCAD.
• Experience in Silicon CMOS or SiGe BiCMOS TCAD and device analysis.
• RF device design and characterization experience.
• Experience with Cadence or any other layout and simulation tool.
• Strong data analysis skills.
• Fluency in English Language – written & verbal.
• Ability to relocate to Essex Junction, VT

Responsibilities

• TCAD simulation, design, electrical characterization and analysis of SiGe HBTs and RF CMOS devices.
• Theoretical studies or simulations to optimize device performance and benchmark against state of the art.
• Collaborate with process integration team for device fabrication work.
• Establish new technology design rules, test structures and test methodologies.
• DC and RF characterization and analysis including high power measurements, s-parameter and loadpull.
• Own and drive technical process problem solving.
• Data analysis and teamwork with internal and external customers.

Skills

RF device design

Device analysis

Data analysis

English fluency

Education

Master’s or PhD in Electrical/Materials Science

Tools

Cadence

Job description

GlobalFoundries in Essex Junction, VT seeks a senior specialist for TCAD simulations, device design and DC/RF characterization of SiGe HBTs and RF CMOS devices. You will optimize performance, benchmark against state-of-the-art results, and partner with process integration to enable fabrication initiatives.

The role demands 3+ years in semiconductor device analysis, strong data analytics, English fluency, and willingness to relocate to Essex Junction, VT.