SiGe HBT & BiCMOS Device Expert for RF Innovation

Texas Instruments

Dallas (TX)

On-site

USD 120,000 - 180,000

Full time

14 days+

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Job summary

Texas Instruments in Dallas is seeking a Process Development Engineer to develop, characterize, and optimize BiCMOS SiGeC devices for volume production. The role requires a solid foundation in CMOS/BJT process physics and hands-on TCAD/3D simulations, with collaboration across design, reliability, and product teams to deliver robust, manufacturable solutions.

The Advanced Technology Development group leads these efforts.

Qualifications

Masters degree in Electrical Engineering or Physics.
10+ years of professional experience as a Device/PI engineer working with SiGe HBT devices.
Strong device physics and semiconductor device engineering background.
Industry experience in developing SiGe:C HBT transistors for RF/mm-wave applications.

Responsibilities

Develop new processes and components to enable next generation BICMOS SiGeC technologies.
Drive the TCAD simulation (process and device simulation, HF simulations), design of experiments, RF and DC characterization, and data analysis of key components.
Work with multiple process, integration, reliability, packaging, circuit design and test engineers to achieve these goals.
Work closely with the product groups to identify and optimize the BICMOS component performance to meet critical final device parameters to enable game changing products in the market.
Work across different development groups; process flow, device design, modelling, simulation, reliability, etc.