RF Tech Development Engineer (SiGe/TCAD)

GlobalFoundries; Essex Junction (VT); On-site; USD 98,000 - 176,000; Full time

Job summary

GlobalFoundries in Essex Junction, VT, is seeking a device and TCAD engineer with experience in SiGe HBTs and RF CMOS technologies. The role focuses on TCAD simulation, device design, electrical characterization, and data analysis within the RF Technology Development Organization.

Candidates should have a Master’s or PhD in electrical or materials science and hands-on TCAD and RF measurement experience. Relocation to Essex Junction, VT is required.

Qualifications

• Master's or PhD in Electrical, Materials Science, or related field required.
• 3+ years in semiconductor device analysis and TCAD.
• RF device design and characterization experience desirable.

Responsibilities

• TCAD simulation, design, electrical characterization of SiGe HBTs and RF CMOS devices.
• Optimize device performance via simulations and benchmarking against state of the art.
• Collaborate with process integration for device fabrication.
• Establish test structures, rules, and methodologies.
• DC and RF characterization including high power measurements, s-parameter and loadpull.
• Drive technical process problem solving and data analysis.

Skills

Data analysis

English fluency

Team collaboration

Education

Master's or PhD in Electrical/Materials Science

Tools

Cadence or layout/simulation tools

Job description

GlobalFoundries in Essex Junction, VT, is seeking a device and TCAD engineer with experience in SiGe HBTs and RF CMOS technologies. The role focuses on TCAD simulation, device design, electrical characterization, and data analysis within the RF Technology Development Organization.

Candidates should have a Master’s or PhD in electrical or materials science and hands-on TCAD and RF measurement experience. Relocation to Essex Junction, VT is required.