SiGe HBT Device Expert

Texas Instruments Incorporated; Dallas (TX); On-site; USD 110,000 - 160,000; Full time

Job summary

Texas Instruments Incorporated in Dallas is seeking a Process Development Engineer to develop, characterize, and optimize BiCMOS SiGeC devices for volume production. The ideal candidate will have solid CMOS/BJT theory and drive characterization, experiments, and data analysis to ensure robustness and manufacturability meeting performance targets.

You will collaborate with process, integration, reliability, packaging, circuit design and test engineers and work with product groups to optimize

Qualifications

• Background in CMOS or BJT process and device physics.
• Experience developing and optimizing BiCMOS SiGeC technologies.
• Ability to plan experiments, analyze data, and drive robust designs.
• Ability to collaborate across process, integration, reliability, packaging and design teams.

Responsibilities

• Develop new processes and components to enable BiCMOS SiGeC technologies.
• Drive TCAD simulation, design of experiments, RF and DC characterization, and data analysis.
• Work with process, integration, reliability, packaging, circuit design and test engineers.
• Collaborate with product groups to optimize component performance for final device targets.
• Coordinate across development groups to ensure schedules and milestones are met.

Skills

TCAD simulations

Design of experiments

RF characterization

DC characterization

Data analysis

Cross-functional collaboration

Tools

TCAD

Job description

We can't predict what the future holds, but we know Texas Instruments will have a part in shaping it.

The Advanced Technology Development team at TI is looking for a Process Development Engineer with a long-term goal to be responsible for the development, characterization and optimization of BiCMOS SiGeC devices to meet the requirements for volume production. The ideal candidate will have a solid foundation in the theory of semiconductor CMOS or BJT process and device physics and would be comfortable driving the characterization and optimization of the device and process to insure robustness, reliability, and manufacturability meeting all electrical device performance targets.

Responsibilities include:

• Develop new processes and components to enable next generation BICMOS SiGeCtechnologies.
• Drive the TCAD simulation (process and device simulation, HF simulations),design of experiments,RF and DC characterization,and data analysis of key components.
• Work with multiple process, integration, reliability, packaging, circuit design and test engineers to achieve these goals.
• Work closely with the product groups to identify and optimize the BICMOS component performance to meet critical final device parameters to enable game changing products in the market.
• Work across different development groups; process flow, device design, modelling, simulation, reliability, etc.

The person performing this role must be capable to plan effectively, drive schedules, meet critical deadlines on multiple tasks in parallel, lead technical discussions in their area of expertise, and work effectively across organizational boundaries. They must be able to clearly communicate project status and actions. Additionally, they must be able to interface with multiple organizations and work well on a diverse team to accomplish goals.