Senior GaN Epitaxy & Process Innovation Engineer

Infineon Technologies; Singapore; On-site; SGD 150,000 - 190,000; Full time

Job summary

Infineon Technologies, Singapore, is seeking an experienced GaN Epitaxy Development Engineer to design epitaxial structures and optimize MOCVD processes. You will lead cross-functional efforts, mentor engineers, and help transition processes from R&D to high-volume manufacturing in a fast-paced environment.

The ideal candidate has a Master’s (or PhD) in a relevant field and extensive hands-on III-V GaN growth experience, with strong data analytics and problem-solving skills.

Qualifications

• Master’s degree in Materials Science, Physics, Electrical Engineering, or Chemical Engineering.
• Ph.D. in a relevant physical science or microelectronics preferred.
• Experience in III-V hetero-epitaxy and GaN growth is highly desirable.

Responsibilities

• Design GaN epitaxial structures and growth recipes to meet device targets.
• Direct hands-on MOCVD recipe optimization for GaN-based devices.
• Transition epitaxial processes from R&D into high-yield manufacturing.
• Address defect density, wafer stress and layer uniformity to improve yield.
• Apply DOE and SPC to monitor and improve processes.
• Analyze SEM, TEM, AFM, and XRD data to relate materials to performance.
• Influence roadmaps and advise on material investments; mentor engineers.
• Collaborate with device, process integration, and failure analysis teams.

Skills

GaN epitaxy

MOCVD optimization

DOE

SPC

Data analytics

Cross-functional

Mentorship

Education

Master’s in Materials Science/Physics/EE/C Chemical Engineering

Ph.D. in physical science or microelectronics

Tools

Aixtron

Veeco platforms

MOCVD equipment

Job description

Infineon Technologies, Singapore, is seeking an experienced GaN Epitaxy Development Engineer to design epitaxial structures and optimize MOCVD processes. You will lead cross-functional efforts, mentor engineers, and help transition processes from R&D to high-volume manufacturing in a fast-paced environment.

The ideal candidate has a Master’s (or PhD) in a relevant field and extensive hands-on III-V GaN growth experience, with strong data analytics and problem-solving skills.