Process / Senior Process Engineer - SiC Epitaxy, (APM), IME

A*STAR - Agency for Science, Technology and Research; Singapore; On-site; SGD 50,000 - 70,000; Full time

Job summary

A*STAR - Agency for Science, Technology and Research is seeking a talented Process Engineer/Senior Process Engineer for their epitaxy team in Singapore. This role focuses on SiC epitaxy process development for next-generation power devices. The successful candidate will design innovative processes, perform characterization, and work collaboratively to address technical challenges in the semiconductor industry. Candidates should have a relevant degree and 2-3 years of experience in CVD processes, with skills in data analysis and relevant characterization tools.

Qualifications

• 2 to 3 years of experience in semiconductor CVD process, preferably in epitaxy.
• Strong knowledge of semiconductor processes and characterization techniques.
• Excellent communication, collaboration, and self-motivation skills.

Responsibilities

• Design and implement innovative SiC epitaxial processes.
• Perform metrology and characterization of SiC epilayers.
• Conduct optical inspections of extended defects in SiC epilayers.
• Design experiments to minimize defect densities in SiC.
• Develop advanced epitaxy processes for cutting-edge devices.

Skills

Semiconductor CVD process

Data analysis

Technical communication

Critical thinking

Collaboration

Education

Bachelor's or Master's degree in Electrical/Electronic Engineering, Materials Science, Physics, Chemistry

Tools

Excel

JMP

Origin

SEM

TEM

XRD

Job description

Job Description

We’re seeking a talented and passionate Process Engineer/Senior Process Engineer to join our epitaxy team, Advanced Process Modules (APM). The successful candidate will be responsible for SiC epitaxy process development for next‑generation power devices. This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) - Power Electronics.

Responsibilities

• Design and implement innovative SiC epitaxial processes on an industrial hot-wall CVD system, focusing on achieving exceptional dopant and thickness uniformity, as well as minimal extended defect density on 6- and 8-inch SiC substrates.
• Perform metrology and characterization of SiC epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Conduct optical and photoluminescence inspections of extended defects in SiC epilayers, including critical defects such as micropipes, carrots, triangles, downfalls, stacking faults, and basal plane dislocations.
• Design experiments to minimize point and extended defect densities in SiC, with emphasis on enhancing SiC power device performance.
• Develop advanced epitaxy processes for cutting‑edge devices, such as SiC selective epitaxy and SiC trench‑filling epitaxy.
• Prepare technical presentations and papers for internal meetings, conferences, and journals and draft technical disclosures/IP.
• Collaborate with IME's NSTIC - Power team to address key technical challenges in the SiC power electronics industry.
• Contribute ideation for new funding proposals.
• Perform all other reasonable duties as assigned.

Requirements

• Bachelor's or Master's degree in Electrical/Electronic Engineering, Materials Science, Physics, Chemistry or a related field.
• 2 to 3 years of experience in semiconductor CVD process, preferably epitaxy process development or manufacturing (Si, SiC, GaN, or other semiconductor materials).
• Strong knowledge of semiconductor processes (e.g., lithography, etching) and characterization techniques (e.g., SEM, TEM, XRD).
• Excellent communication, collaboration, and self-motivation skills.
• Avid technical reader, critical thinker, and strong team player.
• Proficiency in data analysis and DOE tools (e.g., Excel, JMP, Origin) is an advantage.