Senior Research Engineer II, Si/SiGe/Ge Epitaxy, APM, IME

A*STAR - Agency for Science, Technology and Research; Singapore; On-site; SGD 120,000 - 180,000; Full time

Job summary

A*STAR - Agency for Science, Technology and Research in Singapore seeks a Senior/Lead Process Engineer to join the Advanced Process Modules epitaxy team. The role focuses on Si/SiGe/Ge epitaxy process development for next-generation photonic devices and requires hands-on experience on industrial CVD systems.

You will design and optimize selective epitaxy processes, perform metrology on epitaxial layers, prepare technical presentations, and contribute to funding proposals while collaborating with

Qualifications

• Bachelor’s or Master’s degree in a related field (Electrical/Electronic Engineering, Materials Science, Physics).
• 5+ years of proven experience in semiconductor epitaxy process development or manufacturing (Si, Ge or related materials).
• Strong knowledge of semiconductor processes (lithography, etching) and characterization (SEM, TEM, XRD).
• Experience with data analysis and DOE tools is advantageous.

Responsibilities

• Design and implement selective Si/SiGe/Ge epitaxial processes on industrial CVD systems with focus on low defect density and uniformity.
• Perform metrology and characterization of epitaxial layers (dopant, thickness, surface roughness, crystal quality).
• Design experiments to control epitaxy layer profiles for photonic devices.
• Support integration and processing devices teams.
• Prepare presentations and papers for internal meetings, conferences, and journals.

Skills

Epitaxy process development

Semiconductor processes knowledge

DOE / data analysis

Communication & collaboration

Problem solving / critical thinking

Education

Bachelor’s or Master’s degree in Electrical/Electronic Engineering, Materials Science, Physics

Tools

Excel

JMP

Origin

Job description

Job Title: Senior / Lead Process Engineer – Si/SiGe/Ge Epitaxy.

We're seeking a talented and passionate Senior/Lead Process Engineer to join our epitaxy team, Advanced Process Modules (APM). The successful candidate will be responsible for Si/SiGe/Ge epitaxy process development for next-generation photonic devices.

Responsibilities

• Design and implement innovative selective Si, SiGe, Ge epitaxial processes on an industrial CVD system, focusing on achieving low defect density, especially low threading dislocation density, high thickness uniformity epilayer on 8-inch and 12-inch Si and SOI substrates.


• Perform metrology and characterization of Si, SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).


• Design experiments to control the selective epitaxy layer profile to achieve the designed requirement for photonic devices.


• Support integration and processing devices team.


• Prepare technical presentations and papers for internal meetings, conferences, and journals.


• Publish technical papers and draft technical disclosures/IP.


• Contribute ideas for new funding proposals.


• Perform all other reasonable duties as assigned.

Requirements

• Bachelor’s or Master’s degree in Electrical/Electronic Engineering, Materials Science, Physics, or a related field.


• At least 5 years of proven experience in semiconductor epitaxy process development or manufacturing (Si, Ge or other semiconductor materials).


• Strong knowledge of semiconductor processes (e.g., lithography, etching) and characterization techniques (e.g., SEM, TEM, XRD).


• Strong physic background of photonic devices such as photodetectors, waveguides, waveguide photo detector, modulators with experimental experience would be a plus.


• Excellent communication, collaboration, and self-motivation skills.


• Avid technical reader, critical thinker, and strong team player.


• Proficiency in data analysis and DOE tools (e.g., Excel, JMP, Origin) is an advantage.