Principal Engineer - GaN Epitaxy Development

Infineon Technologies; Singapore; On-site; SGD 150,000 - 190,000; Full time

Job summary

Infineon Technologies, Singapore, is seeking an experienced GaN Epitaxy Development Engineer to design epitaxial structures and optimize MOCVD processes. You will lead cross-functional efforts, mentor engineers, and help transition processes from R&D to high-volume manufacturing in a fast-paced environment.

The ideal candidate has a Master’s (or PhD) in a relevant field and extensive hands-on III-V GaN growth experience, with strong data analytics and problem-solving skills.

Qualifications

• Master’s degree in Materials Science, Physics, Electrical Engineering, or Chemical Engineering.
• Ph.D. in a relevant physical science or microelectronics preferred.
• Experience in III-V hetero-epitaxy and GaN growth is highly desirable.

Responsibilities

• Design GaN epitaxial structures and growth recipes to meet device targets.
• Direct hands-on MOCVD recipe optimization for GaN-based devices.
• Transition epitaxial processes from R&D into high-yield manufacturing.
• Address defect density, wafer stress and layer uniformity to improve yield.
• Apply DOE and SPC to monitor and improve processes.
• Analyze SEM, TEM, AFM, and XRD data to relate materials to performance.
• Influence roadmaps and advise on material investments; mentor engineers.
• Collaborate with device, process integration, and failure analysis teams.

Skills

GaN epitaxy

MOCVD optimization

DOE

SPC

Data analytics

Cross-functional

Mentorship

Education

Master’s in Materials Science/Physics/EE/C Chemical Engineering

Ph.D. in physical science or microelectronics

Tools

Aixtron

Veeco platforms

MOCVD equipment

Job description

#WeAreIn for jobs that impact everyone's life. Join the thinkers, builders, and problem‑solvers behind tomorrow’s technology. As a GaN Epitaxy Development Engineer on our Research & Development team, you'll have the opportunity to merge creativity with your technical expertise by shaping the future of technology, driving groundbreaking projects, and bringing new ideas to life. Are you in?

Your Role

Key responsibilities in your new role

Epitaxial Growth & Recipe Development

• Design GaN epitaxial structures (e.g., buffer layers, superlattices, and HEMT structures) based on specific device performance targets
• Direct hands‑on MOCVD (Metal‑Organic Chemical Vapor Deposition) recipe optimization

Process Integration & Manufacturability

• Transition new epitaxial processes from R&D into high-yield, high-volume manufacturing
• Address manufacturability hurdles like defect density, wafer stress, and layer uniformity

Data Analytics & Metrology

• Utilize Design of Experiments (DOE) and Statistical Process Control (SPC) to monitor and improve processes
• Analyze characterization data using techniques like SEM, TEM, AFM, and XRD to correlate material properties to final device performance

Strategic Leadership & Cross‑Functional Work

• Influence long‑term product technology roadmaps and advise management on material and equipment investments
• Act as a mentor to junior and senior engineers, establishing technical best practices across the team
• Collaborate with device, process integration, and failure analysis teams to rapidly resolve issues

Your Profile

Qualifications And Skills To Help You Succeed

Education

• Minimum: Master’s degree in Materials Science, Physics, Electrical Engineering, or Chemical Engineering
• Preferred: Ph.D. in a relevant physical science or microelectronics discipline

Experience

• Industry Experience: Typically 7+ to 15+ years of hands‑on semiconductor R&D and manufacturing experience, with a strong focus on III‑V hetero‑epitaxy and GaN growth
• MOCVD Expertise: Deep understanding of Metal‑Organic Chemical Vapour Deposition (MOCVD) reactors (e.g., Aixtron, Veeco platforms) and process optimisation for GaN‑on‑Silicon or GaN‑on‑Sapphire applications
• Scale‑Up Success: Proven track record of taking epitaxial processes from lab‑scale R&D through pilot testing to high-volume manufacturing (HVM)

Core Technical Competencies

• Epitaxial Growth & Materials: Mastery of designing GaN layer stacks and growth recipes (e.g., for power HEMTs, RF, or photonics)
• Advanced Characterization: Strong practical knowledge of metrology and analytical tools like XRD, AFM, TEM, PL, Ellipsometry, and SIMS
• Data Analytics & Problem Solving: Expertise in Statistical Process Control (SPC), Design of Experiments (DOE), and yield optimisation using software like JMP or data‑science tools

Leadership & Soft Skills

• Technical Authority: Acts as the principal subject matter expert, influencing organizational strategy and product roadmaps
• Mentorship: Ability to guide and mentor junior/staff engineers, fostering technical capability across the organization
• Collaboration: Experience interfacing across global, cross‑functional teams (e.g., device designers, fab process engineers, and commercial stakeholders)

Contact

For inquiries, please contact Sherlene Ong.

#WeAreIn for driving decarbonization and digitalization. As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game‑changing solutions for green and efficient energy, clean and safe mobility, and smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.

This means we embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities. We base our recruiting decisions on the applicant's experience and skills. Learn more about our various contact channels.