GaN Device Modeling Engineer | RF/Thermal Insights

Strategic Micro Systems of NJ, LLC.; Cornaredo; On-site; EUR 38,000 - 45,000; Full time

Job summary

STMicroelectronics in Italy is seeking a candidate to support the development and optimization of GaN devices through electrical and thermal characterization and device modeling. You will help develop and maintain compact models, fit parameters to data, and validate results, collaborating with design teams to meet model needs.

The role covers RF, thermal, pulsed measurements, parasitic extraction and safe operating area, with emphasis on GaN device phenomena modeling.

Qualifications

• Master degree in physics, materials science, or electronics/physical engineering.
• Solid knowledge of semiconductor and electronic device physics.
• Basic knowledge of Power MOS.
• Proficient written and spoken English.
• Programming and numerical modeling skills preferred.
• Strong teamwork and problem-solving abilities.

Responsibilities

• Support development and optimization of GaN devices through electrical/thermal characterization and device modeling.
• Develop and maintain compact models for GaN devices and fit parameters.
• Validate models against experimental results.
• Collaborate with design teams to understand model needs and improve usability.
• Characterizations include RF, thermal, pulsed, parasitic extraction and safe operating area.
• Modeling of phenomena in GaN devices.

Skills

Semiconductor physics

Device physics

Power MOS basics

English proficiency

Programming skills

Numerical modeling

Teamwork

Problem solving

Education

Master degree in physics, materials science or electronics/physical engineering

Job description

STMicroelectronics in Italy is seeking a candidate to support the development and optimization of GaN devices through electrical and thermal characterization and device modeling. You will help develop and maintain compact models, fit parameters to data, and validate results, collaborating with design teams to meet model needs.

The role covers RF, thermal, pulsed measurements, parasitic extraction and safe operating area, with emphasis on GaN device phenomena modeling.