GaN Device Modeling Engineer — RF & Thermal Analysis

STMicroelectronics Italia

Cornaredo

On-site

EUR 38,000 - 45,000

Full time

4 days ago

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Job summary

STMicroelectronics Italia is seeking a candidate to support the development and optimization of GaN devices through electrical/thermal characterization and device modeling. The role aims to enable data-driven decisions for design and application teams, spanning RF, thermal, and parasitic extraction.

You will help fit model parameters to measurements, validate results against experiments, and work with design groups to improve model usability, requiring strong physics background and programming

Qualifications

Master’s degree in physics, materials science, or electronics.
Strong knowledge of semiconductor/device physics.
Basic knowledge of Power MOS.
Proficient English language skills.
Programming and numerical modeling abilities.
Strong problem solving and teamwork.

Responsibilities

Support development and optimization of GaN devices via electrical/thermal characterization and device modeling.
Contribute to data analysis to enable design and application teams to make data-driven decisions.
Assist in fitting model parameters to measurement data and validate against experiments.
Collaborate with design teams to improve model usability; perform RF, thermal, pulsed, and parasitic extraction.

Skills

Semiconductor physics

Device physics

English proficiency

Programming & modeling

Teamwork

Problem solving

Education

Master's degree in physics or related field

Job description

You will help fit model parameters to measurements, validate results against experiments, and work with design groups to improve model usability, requiring strong physics background and programming

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