GaN Device Modeling Engineer – RF & Thermal

STMicroelectronics; Cornaredo; On-site; EUR 38,000 - 45,000; Full time

Job summary

STMicroelectronics is seeking a researcher to support the development and optimization of GaN devices. You will conduct electrical/thermal characterization and contribute to data-driven decisions in collaboration with design teams.

The role involves developing compact models, fitting parameters to measurements, and validating models against experimental results, with emphasis on GaN device phenomena.

Qualifications

• Master's degree in physics, materials science, electronics or related engineering.
• Strong knowledge of semiconductor and electronic device physics.
• Basic knowledge of Power MOS.
• Fluent written and spoken English is required.
• Programming and numerical modeling skills are appreciated.
• Approach to problem solving and teamwork is required.

Responsibilities

• Characterize GaN devices (RF, thermal, pulsed, parasitic extraction, safe operating area).
• Develop and maintain compact models for GaN devices and fit model parameters to data.
• Collaborate with design teams to improve model usability and accuracy.

Skills

MSc Physics/Materials

Semiconductor physics

Power MOS knowledge

English proficiency

Programming & modeling

Problem solving & teamwork

Education

Master's degree in physics/materials/electronics

Job description

STMicroelectronics is seeking a researcher to support the development and optimization of GaN devices. You will conduct electrical/thermal characterization and contribute to data-driven decisions in collaboration with design teams.

The role involves developing compact models, fitting parameters to measurements, and validating models against experimental results, with emphasis on GaN device phenomena.