SiC Power Devices R&D Intern - TCAD & Design

hitachi; Lavamünd; Vor Ort; EUR 18.000 - 29.000; Vollzeit

Zusammenfassung

HITACHI ENERGY LTD is offering an R&D internship in our SiC power-device team. You will support chip design and simulation, gaining hands-on experience across the full development cycle of SiC MOSFETs, while collaborating with experienced engineers and process specialists.

This internship aims to grow your TCAD skills and deepen semiconductor knowledge in a real-world setting within a dynamic, inclusive environment.

Qualifikationen

• Master's degree in Electrical Engineering, Physics, or Materials Science.
• Experience with TCAD tools, ideally in SiC device simulation.
• Understanding of SiC device physics.
• Basic knowledge of semiconductor fabrication processes.
• Strong analytical and data interpretation skills.
• Fluent in English with excellent communication skills.

Aufgaben

• Assist in the conceptual design and TCAD simulation of SiC power devices.
• Work with experienced engineers to refine device structures and optimise performance.
• Predict electrical characteristics and validate simulation results.
• Analyze data, document findings, and present insights in team meetings.
• Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements.

Kenntnisse

English fluency

Analytical skills

Data interpretation

Team collaboration

Problem solving

Ausbildung

Master’s in Electrical Engineering/Physics/Materials Science

Tools

TCAD tools

SiC device simulation

Jobbeschreibung

HITACHI ENERGY LTD is offering an R&D internship in our SiC power-device team. You will support chip design and simulation, gaining hands-on experience across the full development cycle of SiC MOSFETs, while collaborating with experienced engineers and process specialists.

This internship aims to grow your TCAD skills and deepen semiconductor knowledge in a real-world setting within a dynamic, inclusive environment.