Staff Device Engineer – 3D NAND & Memory Tech

Sandisk; Milpitas (CA); On-site; USD 150,000 - 190,000; Full time

Job summary

Sandisk is seeking a PhD-level researcher to advance the next generation of 3D NAND flash at its Milpitas, CA facility. You will perform electrical characterizations, evaluate reliability, and optimize device operation to enhance memory performance. The role requires a Ph.D.

in Electrical Engineering, Applied Physics, or Materials Science and at least 3 years of relevant industry experience. You will work in a fast-moving team environment addressing challenging reliability issues and innovating

Qualifications

• Ph.D. in Electrical Engineering, Applied Physics, Materials Science or a related field.
• 3+ years of relevant industry experience.

Responsibilities

• Develop the future generation of 3D NAND flash.
• Conduct electrical characterizations of flash memory chips to improve reliability and performance.
• Characterize memory cells and arrays, evaluate reliability, optimize methods, and invent solutions.
• Perform root cause analysis of cell reliability issues and identify solutions.

Skills

Semiconductor device physics

Nano-electronics

Statistical methods for experimental

Education

Ph.D. in Electrical Engineering / Applied Physics / Materials Science

Job description

Sandisk is seeking a PhD-level researcher to advance the next generation of 3D NAND flash at its Milpitas, CA facility. You will perform electrical characterizations, evaluate reliability, and optimize device operation to enhance memory performance. The role requires a Ph.D.

in Electrical Engineering, Applied Physics, or Materials Science and at least 3 years of relevant industry experience. You will work in a fast-moving team environment addressing challenging reliability issues and innovating