Senior Memory Design Engineer — DRAM & HBM

Micron Technology, Inc.

Richardson (TX)

On-site

USD 120,000 - 180,000

Full time

7 days ago
Be an early applicant
Application generator

Don’t send a generic resume — generate a resume and cover letter tailored to this exact role.

Get past ATS filters

Benefits offered by this job

Medical, dental, and vision plans
Paid time off
Paid holidays

Job summary

Micron Technology, Inc. in Richardson, Texas, seeks a Senior Design Engineer to design, simulate, and optimize DRAM circuits and support digital/analog circuitry development for advanced memory products.

You will collaborate globally across design, verification, product engineering, test, and manufacturing to deliver manufacturable, cost-optimized solutions. The role requires coursework in CMOS, VLSI and analog design, proficiency with Cadence Virtuoso and simulators (FINESIM, HSPICE, Verilog),

Qualifications

  • Coursework in CMOS Circuit Design, VLSI, and Analog Circuit Design.
  • Experience with Cadence Virtuoso and circuit simulators (FINESIM, HSPICE, Verilog).
  • Strong analytical and problem-solving skills with proven technical contributions.
  • DRAM subsystem experience or design knowledge and leadership.

Responsibilities

  • Design digital, analog, and memory core circuits from concept to solution.
  • Use AI-enabled tools to assist with schematic editing and layout planning.
  • Prepare floorplans for placement, routing, and power delivery, including layout leadership.
  • Simulate circuits and analyze power, performance, and reliability.
  • Validate builds and lead design reviews to communicate progress.

Skills

CMOS Circuit Design
VLSI
Analog Circuit Design
Cross-functional leadership
Analytical thinking

Education

BS/MS in Electrical Engineering

Tools

Cadence Virtuoso
FINESIM
HSPICE
Verilog

Job description

Micron Technology, Inc. in Richardson, Texas, seeks a Senior Design Engineer to design, simulate, and optimize DRAM circuits and support digital/analog circuitry development for advanced memory products.

You will collaborate globally across design, verification, product engineering, test, and manufacturing to deliver manufacturable, cost-optimized solutions. The role requires coursework in CMOS, VLSI and analog design, proficiency with Cadence Virtuoso and simulators (FINESIM, HSPICE, Verilog),

Get your free, confidential resume review.
or drag and drop your file here.
Similar jobs

Similar jobs worth comparing

Senior Memory Design Engineer: HBM & DRAM Innovation
Senior Memory Design Engineer: HBM & DRAM Innovation

Micron Technology, Inc • Richardson (TX)

On-site
USD 120,000 - 160,000
Lead Memory Design Engineer, DRAM/HBM Innovation
Lead Memory Design Engineer, DRAM/HBM Innovation

Micron Technology, Inc • Richardson (TX)

On-site
USD 120,000 - 150,000
Robust paid time-off program
Paid family leave
Income protection programs
Memory Design Engineer: CMOS & DRAM Innovation
Memory Design Engineer: CMOS & DRAM Innovation

Micron Memory Malaysia Sdn Bhd • Richardson (TX)

On-site
USD 150,000 - 190,000
HBM Memory Design Architect — Senior DRAM Lead
HBM Memory Design Architect — Senior DRAM Lead

Micron Technology Inc • Richardson (TX)

On-site
USD 140,000 - 200,000
Lead Memory Design Engineer: DRAM & HBM
Lead Memory Design Engineer: DRAM & HBM

Micron Technology • Richardson (TX)

On-site
USD 150,000 - 210,000
Memory Design Engineer: CMOS & DRAM Innovation
Memory Design Engineer: CMOS & DRAM Innovation

Micron Technology, Inc • Richardson (TX)

On-site
USD 100,000 - 130,000
Choice of medical, dental, and vision plans
Paid family leave
Robust paid time-off program
Senior HBM Design Architect — Memory for AI and HPC
Senior HBM Design Architect — Memory for AI and HPC

Micron Memory Malaysia Sdn Bhd • Richardson (TX)

On-site
USD 146,000 - 297,000
Memory Design Engineer, HBM — DRAM Core & Layout Lead
Memory Design Engineer, HBM — DRAM Core & Layout Lead

Micron Technology, Inc • Richardson (TX)

On-site
USD 80,000 - 100,000
Choice of medical, dental, and vision plans
Paid family leave
Robust paid time-off program and paid holidays
HBM Memory Design Engineer - Circuit & RTL Expert
HBM Memory Design Engineer - Circuit & RTL Expert

Micron Technology, Inc • Richardson (TX)

On-site
USD 120,000 - 180,000
Lead HBM Memory Design Architect (Digital/Analog)
Lead HBM Memory Design Architect (Digital/Analog)

1000 Micron Technology, Inc. • Richardson (TX)

On-site
USD 120,000 - 180,000
Medical insurance
Dental plan
Paid time off
+2