Senior HBM Memory ASIC Design Lead

1000 Micron Technology, Inc.; Richardson (TX); On-site; USD 120,000 - 180,000; Full time

Benefits offered by this job

Medical, dental & vision plans

Paid time off & holidays

Competitive benefits

Job summary

Micron Technology, Inc. seeks a memory design engineer in the Richardson area to craft high-speed memory IP and integrate end-to-end memory solutions. You will work across design, test, process integration and marketing teams to optimize memory circuits, timing, and power while guiding verification and qualification activities.

The role emphasizes collaboration on front-end/back-end design, floorplanning, and managing complex DRAM pathways to deliver best-in-class performance and reliability.

Qualifications

• Master’s degree in Electrical Engineering or related field.
• 10+ years of experience in memory/ASIC design.
• Experience with high-speed memory and data-path design.

Responsibilities

• Design and analyze high-speed memory architectures from I/O to core array.
• Collaborate with design and verification teams across the world and support related groups.
• Develop and validate timing, power, and reliability for memory products.

Skills

Memory design

Power analysis

MBIST

RTL design

ASIC design

Timing closure

Signal integrity

Education

Master’s degree in Electrical Engineering

Tools

MBIST

Job description

Micron Technology, Inc. seeks a memory design engineer in the Richardson area to craft high-speed memory IP and integrate end-to-end memory solutions. You will work across design, test, process integration and marketing teams to optimize memory circuits, timing, and power while guiding verification and qualification activities.

The role emphasizes collaboration on front-end/back-end design, floorplanning, and managing complex DRAM pathways to deliver best-in-class performance and reliability.