Senior DRAM BEOL Engineer - AI-Driven Process Integration

Micron Technology, Inc.; Boise (ID); On-site; USD 120,000 - 160,000; Full time

Benefits offered by this job

Medical, dental, vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. seeks a Sr BEOL Engineer for DRAM process integration in Boise, ID. You will work in BEOL, partnering with module and device teams to advance metallization, dielectrics, etch, and CMP processes, while applying AI/analysis to boost yield and reliability.

The role focuses on developing, optimizing, and transferring BEOL flows from R&D to production, with opportunities to visualize data and influence technology direction in memory devices.

Qualifications

• Master’s degree with at least two years of proven experience (or PhD with relevant work).
• Basic knowledge of semiconductor manufacturing techniques (thin films, etch, lithography).
• Familiarity with BEOL concepts: metallization, interconnects, dielectrics.
• Hands-on experience with thin-film deposition or etch processes (CVD, ALD, PVD).
• Experience in process integration, yield improvement, or reliability testing.

Responsibilities

• Support development, optimization, and integration of semiconductor process flows.
• Collaborate across modules to resolve integration challenges.
• Analyze process and electrical data using AI-enabled tools to improve yield.
• Document findings and present recommendations to engineering teams.

Skills

Analytical thinking

Communication

Team collaboration

Education

Master’s degree in Electrical Engineering or related

PhD in related field (preferred)

Tools

JMP

Python

R

Job description

Micron Technology, Inc. seeks a Sr BEOL Engineer for DRAM process integration in Boise, ID. You will work in BEOL, partnering with module and device teams to advance metallization, dielectrics, etch, and CMP processes, while applying AI/analysis to boost yield and reliability.

The role focuses on developing, optimizing, and transferring BEOL flows from R&D to production, with opportunities to visualize data and influence technology direction in memory devices.