Technology Development Intern, RF GaN (Summer 2027)

GlobalFoundries; Essex Junction (VT); On-site; USD 28,000 - 55,000; Full time

Job summary

GlobalFoundries seeks highly motivated students to join its Technology Development team in Vermont (FAB9) for semiconductor process and device development, focusing on GaN HEMT technologies for RF applications. Interns will work within project teams, contributing to new process flows and device characterization.

You will gain mentorship, work on in-line measurements, and participate in experiments to advance world-class semiconductor technologies, with a pathway to a professional career after

Qualifications

• Pursuing a Masters or PhD in Electrical Engineering or Solid State Physics.
• Knowledge of semiconductor device physics and wide band gap materials.

Responsibilities

• Invent with device, test, and process integration teams to define modules and analysis tools.
• Focus on GaN HEMT development for RF applications.
• Collaborate with device, process integration, and program management teams to design experiments and meet performance goals.
• Coordinate with Fab9 engineering teams to ensure tool availability and process controls for new devices.
• Support device simulation and final characterization analysis to achieve best-in-class performance.

Skills

GaN HEMT

Device characterization

RF testing

Team collaboration

Education

Masters or PhD in Electrical Engineering or Solid State Physics

Job description

About GlobalFoundries

GlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power-efficient and high-performance solutions for high-growth markets. GF is a trusted and holistic technology partner for customers around the world. GF's talented, global team remains focused every day on security, longevity and sustainability. For more information, visit www.gf.com.

Internship Program Overview

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you'll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

Summary of Role

We are seeking highly motivated students with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). Interns will embed within our project teams of process, integration, and device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications.

Essential Responsibilities Include

• Invent with device, test, and process integration team members in defining, designing, and setting up process modules and integration, associated in-line physical and electrical measurement structures and associated measurement and analysis tools to be used in the technology to meet project objectives for electrical performance, reliability, and yield.


• Focus on GaN HEMT development for RF applications.


• Collaborate with the various device, process integration, and program management teams in our technology development team to organize, run, and analyze experiments for the GaN technology as it is being developed to meet performance, reliability, yield, and cost objectives.


• Collaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.


• Collaborate with various technical teams to ensure appropriate process module & integration, in-line process controls, and corresponding electrical tests are available for any new devices or concerns.


• Collaborate with teams on physical and electrical device simulation and final characterization analysis to meet best in class device performance.


• Including potential DC/AC and RF test and analysis of discrete electrical devices including GaN HEMTs, capacitor, Diode, and resistor devices.


• Support technology development qualification milestones from conception through manufacturing installation.

Other Responsibilities

Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications

• Education – Actively pursuing a Masters or Ph. D. in Electrical Engineering or Solid State Physics or related field through an accredited degree program during the time of internship.


• A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on wide band gap materials like the III-N material system.


• Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication.


• Must have at least an overall 3.0 GPA and be in good academic standing.


• Language Fluency - English (Written & Verbal)


• Ability to work at least 40 hours per week during the internship.

Preferred Qualifications

• Prior related internship or co-op experience


• Demonstrated prior leadership experience in the workplace, school projects, competitions, etc.


• Project management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.


• Strong written and verbal communication skills


• Strong planning & organizational skills


• Educational experience in modern device physics (FET, BJT, and HEMT devices, bulk and SOI device structures).


• Including associated electrical test and analysis methods of discrete device structures.


• Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.


• Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design, and analysis techniques.


• Experience in semiconductor processing in GaN, CMOS, SiGe technologies for RF.


• Experience in fabrication and electrical characterization of GaN HEMT devices.

Expected Salary Range

$20.00 - $40.00 Expected Salary Range $0.00 - $0.00 The exact Salary will be determined based on qualifications, experience and location.

Accommodation

If you need a reasonable accommodation for any part of the employment process, please contact us by email at [e-mail] and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.

Equal Opportunity

An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations. GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law.

Company Culture

We shape what's essential At GlobalFoundries you will find a vibrant work environment where collaboration and innovation thrive. Our diverse and global team shares a culture of respect and inclusivity, representing the best in the industry. We celebrate success together and are united by our dedication to excellence and our desire to improve and empower the world.