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Micron Technology, Inc. in Richardson, TX is seeking an HBM Memory Design Engineer to design, simulate, and optimize digital and analog DRAM circuits used in advanced HBM technology.
You will evaluate block-level functionality, perform timing analyses, and contribute to architecture studies for future high-bandwidth memory solutions. Minimum qualifications include a BSEE with 7+ years (or MSEE with 5+ years) in circuit design, strong CMOS knowledge, and experience with HSPICE/FineSim and
As an HBM Memory Design Engineer in Micron’s HBM Architecture Team, you will design, simulate, analyze, and floorplan digital and analog DRAM circuits used in advanced HBM technology. You will evaluate block-level and full-chip functionality, perform architectural pathfinding, and contribute to the development of next‑generation high‑bandwidth DRAM solutions.
Micron offers a range of benefits, including medical, dental, and vision plans, income protection programs, paid family leave, a robust paid time‑off program, and paid holidays.
Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.