Principal 2D MoS2 Device & Compact Modeling Engineer

PhantaField; Santa Clara (CA); On-site; USD 170,000 - 260,000; Full time

Job summary

PhantaField is seeking a Principal Device and Compact Modeling Engineer to define and measure the first all‑MoS₂ memory cell (2T0C) at multiple temperatures, then develop compact models for the tier PDK and Sophon models. You will lead device characterization and model extraction, with data ownership secured before external-lab measurements.

The role reports to the CEO and leads the device, characterization and PDK team.

Qualifications

• PhD plus 8+ years in FET device physics.
• Measured pA-level leakage and retention.
• Extract compact models in Verilog-A or BSIM style with corners and temperature.
• Use TCAD to explain measurements.
• Report distributions and their tails.

Responsibilities

• HOT CELL: Specify and measure first all-MoS₂ 2T0C cell at 25, 85, 95 and 105 °C on a rail of 1 V or less.
• LEAKAGE: Measure tier-select off-current at 105 °C with budget ~210 pA per gate and the follow-on read margin.
• COMPACT MODELS: Extract models with corners and temperature; calibrate with device data for PDK and Sophon models.
• CELL LAYOUT: Check 8F² cell layout against measured retention.
• DATA OWNERSHIP: Get data ownership written before any external-lab measurements.

Skills

FET device physics

Compact modeling

TCAD usage

Statistical analysis

External labs coordination

Education

PhD in related field

Tools

Verilog-A

BSIM

Job description

PhantaField is seeking a Principal Device and Compact Modeling Engineer to define and measure the first all‑MoS₂ memory cell (2T0C) at multiple temperatures, then develop compact models for the tier PDK and Sophon models. You will lead device characterization and model extraction, with data ownership secured before external-lab measurements.

The role reports to the CEO and leads the device, characterization and PDK team.