Memory Architect: Custom SRAM & Cache Design

Intel; Austin (TX); Hybrid; USD 164,000 - 269,000; Full time

Job summary

Intel is seeking a Memory Circuit Design Engineer in the US to develop full-custom SRAMs, caches, and memory blocks for future CPUs and SoCs. You will collaborate with architecture, process technology, physical design, and product engineering to deliver scalable memory solutions on advanced CMOS processes.

The role offers opportunity to influence memory architectures, drive circuit innovation, and contribute to Intel's future computing platforms.

Qualifications

• Proficiency in CMOS circuit design and memory design.
• Experience with PPA optimization for memory blocks and periphery.

Responsibilities

• Perform memory circuit design, characterization and simulations.
• Design cache blocks and memory paths; run critical path analyses.
• Lead memory bit-cell and periphery IC design with automation.
• Develop memory array/IP designs and innovations.
• Define methodologies and adhere to project schedules.

Skills

CMOS circuit design

VLSI design methodologies

Education

Bachelor's in Electrical/Computer Engineering

Master's in Electrical/Computer Engineering

PhD in Electrical/Computer Engineering

Tools

Digital circuit design tools

Dynamic simulations

Variation analysis

Signal integrity analysis

Job description

Intel is seeking a Memory Circuit Design Engineer in the US to develop full-custom SRAMs, caches, and memory blocks for future CPUs and SoCs. You will collaborate with architecture, process technology, physical design, and product engineering to deliver scalable memory solutions on advanced CMOS processes.

The role offers opportunity to influence memory architectures, drive circuit innovation, and contribute to Intel's future computing platforms.