Memory Design Engineer - CMOS & DRAM Architect for HBM

Micron Technology, Inc.; Town of Texas (WI); On-site; USD 140,000 - 190,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. in Wisconsin is seeking a Memory Design Engineer to develop and optimize digital and analog circuits for advanced DRAM products.

This role emphasizes circuit design, simulation, validation, and collaboration to ensure manufacturable, reliable, high‑performance memory solutions. The minimum qualifications include a PhD in Electrical Engineering or related field and deep expertise in CMOS design, VLSI, and analog circuits, with experience in FINESIM, HSPICE or VERILOG.

Qualifications

• PhD in Electrical Engineering or related field.
• Strong foundation in CMOS circuit design, VLSI, and analog circuit design, including understanding of device reliability and circuit floor planning.
• Proven analytical and problem‑solving skills with demonstrated technical contributions and innovation.
• Experience or academic exposure to circuit simulation tools such as FINESIM, HSPICE, or VERILOG.
• Ability to collaborate effectively across multiple engineering functions to optimize quality, reliability, cost, and time‑to‑market.

Responsibilities

• Design and optimize digital, analog, and memory core circuits using CMOS technology, translating device concepts into functional solutions.
• Perform circuit simulations and analyses using tools such as FINESIM, HSPICE, and VERILOG to evaluate power, performance, reliability, and parasitics.
• Develop circuit floorplans including placement, routing, power distribution, timing, and die size considerations, while providing layout leadership.
• Validate designs through reticle experiments, tape‑out revisions, and simulation‑to‑silicon correlation, implementing necessary schematic updates.
• Collaborate with global teams across design, verification, product engineering, test, probe, process integration, assembly, and marketing to support manufacturability, quality, and cost objectives.

Skills

CMOS circuit design

VLSI

Analog circuit design

Device reliability

Circuit floor planning

Cross-functional collaboration

Education

PhD in Electrical Engineering or related field

Tools

FINESIM

HSPICE

VERILOG

Job description

Micron Technology, Inc. in Wisconsin is seeking a Memory Design Engineer to develop and optimize digital and analog circuits for advanced DRAM products.

This role emphasizes circuit design, simulation, validation, and collaboration to ensure manufacturable, reliable, high‑performance memory solutions. The minimum qualifications include a PhD in Electrical Engineering or related field and deep expertise in CMOS design, VLSI, and analog circuits, with experience in FINESIM, HSPICE or VERILOG.