Lead DRAM Device Engineer: Drive Yield & Innovation
Micron
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Job summary
Micron in Boise, Idaho, seeks a Lead DRAM Device Engineer to provide technical leadership for device development, characterization, and yield improvement in next-generation memory technologies. You will mentor engineers, drive cross-functional collaboration across Process Integration, Design, Product Engineering, Quality, and Failure Analysis, and help deliver high-impact fab ramps and product quality.
The role requires an MS/PhD in EE or Materials, experience with node introductions, and strong
Qualifications
- MS/PhD in Electrical or Materials Engineering or related field.
- Experience with device physics, characterization, and data analysis.
- Proven ability to lead technical discussions across cross-functional teams.
Responsibilities
- Lead DRAM device activities and be the primary technical contact.
- Drive device characterization and electrical data analysis to improve yield and performance.
- Support new node introductions, technology transfers, and fab ramp activities via RCA and corrective actions.
- Provide technical direction across Process Integration, Design, Quality, and Failure Analysis.
- Mentor engineers and promote data-driven problem solving.
Skills
Education
Tools
Job description
Micron in Boise, Idaho, seeks a Lead DRAM Device Engineer to provide technical leadership for device development, characterization, and yield improvement in next-generation memory technologies. You will mentor engineers, drive cross-functional collaboration across Process Integration, Design, Product Engineering, Quality, and Failure Analysis, and help deliver high-impact fab ramps and product quality.
The role requires an MS/PhD in EE or Materials, experience with node introductions, and strong
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