HBM IO Architecture Principal Engineer — Lead High-Speed IO

Micron Technology, Inc; Richardson (TX); On-site; USD 130,000 - 160,000; Full time

Benefits offered by this job

Choice of medical, dental, and vision plans

Paid family leave

Robust paid time-off program

Job summary

Micron Technology, Inc in Richardson, Texas is seeking a Principal Engineer in HBM IO Design Architecture to lead initiatives for HBM IO circuits and PHY architecture. This pivotal role influences multi-generation product direction and establishes high-speed IO design standards.

The ideal candidate will have a Bachelor’s degree in Electrical Engineering, at least 7 years of experience in memory or high-speed IO design, and strong communication skills to guide cross-team technical direction. Benefits include comprehensive healthcare plans and paid time off.

Qualifications

• 7+ years of hands-on experience in memory or high-speed IO design.
• Deep expertise in analog and mixed-signal CMOS circuit design.
• Strong experience with high-speed IO architectures.

Responsibilities

• Define and own HBM IO and data path architecture across products.
• Architect and analyze TSV-based HBM link schemes.
• Drive alignment across design and process teams.

Skills

Analog and mixed-signal CMOS circuit design

High-speed IO architectures (Rx/Tx, PLL, DLL)

Excellent communication skills

Education

Bachelor’s degree in Electrical Engineering

Master’s degree or PhD in Electrical Engineering

Job description

Micron Technology, Inc in Richardson, Texas is seeking a Principal Engineer in HBM IO Design Architecture to lead initiatives for HBM IO circuits and PHY architecture. This pivotal role influences multi-generation product direction and establishes high-speed IO design standards.

The ideal candidate will have a Bachelor’s degree in Electrical Engineering, at least 7 years of experience in memory or high-speed IO design, and strong communication skills to guide cross-team technical direction. Benefits include comprehensive healthcare plans and paid time off.