HBM Design Architect — End-to-End DFT for 3D Memory

1000 Micron Technology, Inc.; Richardson (TX); On-site; USD 146,000 - 297,000; Full time

Job summary

1000 Micron Technology, Inc. is seeking an HBM Design Architect to define testing strategies for next-generation HBM products. You will ensure quality and performance across complex multi-die architectures.

The ideal candidate should have a Bachelor's or Master's degree in Electrical Engineering and relevant experience, particularly in DFT techniques for DRAM or ASIC. A competitive salary range of $146,000 to $297,000 is offered, along with benefits and bonuses.

Qualifications

• Strong knowledge of scan, MBIST, JTAG, and boundary scan concepts.
• Experience with wafer probe and final test semiconductor flows.
• 5+ years of experience in DRAM or ASIC DFT design or verification.

Responsibilities

• Define and implement end‑to‑end DFT architectures for HBM.
• Develop DFT strategies for multi-die testing.
• Architect test access mechanisms supporting wafer probe.
• Enable silicon observability for yield learning and debug.
• Collaborate across design, verification, layout, and manufacturing.

Skills

DFT architectures

Test access mechanisms

Collaboration

Debugging and failure analysis

Education

Bachelor's or Master's degree in Electrical Engineering or related field

Job description

1000 Micron Technology, Inc. is seeking an HBM Design Architect to define testing strategies for next-generation HBM products. You will ensure quality and performance across complex multi-die architectures.

The ideal candidate should have a Bachelor's or Master's degree in Electrical Engineering and relevant experience, particularly in DFT techniques for DRAM or ASIC. A competitive salary range of $146,000 to $297,000 is offered, along with benefits and bonuses.