HBM Design Architect - 3D Packaging & Nanotech Lead
NanoHelp
Richardson (TX)
On-site
USD 120,000 - 160,000
Full time
14 days+
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Benefits offered by this job
Comprehensive medical, dental, and vision coverage
Paid time off and family leave
Income protection and holidays
Job summary
A leading semiconductor company located in Texas is looking for a highly skilled HBM Design Architect. This role focuses on the design and integration of advanced DRAM technologies for next-generation AI and data-intensive systems. Candidates should have over 10 years of experience in engineering/design, with expertise in nanometer CMOS, DRAM architecture, and 3D integration. Comprehensive benefits are included, along with opportunities for professional growth in nanotechnology.
Qualifications
10+ years in engineering/design with strong background in nanometer CMOS, DRAM architecture, and 3D integration.
Expertise in memory array design is required.
Familiarity with DRAM bring-up and JEDEC standards.
Responsibilities
Lead architecture pathfinding and feasibility analysis for new HBM generations.
Collaborate with customers to refine specifications and future designs.
Debug pre- and post-silicon HBM issues and identify root causes.
Skills
Nanometer CMOS
DRAM architecture
3D integration
Signal integrity
High-speed clocking/interfaces
Education
BSEE or higher in nanotechnology, electrical engineering, or semiconductor engineering
Tools
FastSpice
Hspice
Job description
A leading semiconductor company located in Texas is looking for a highly skilled HBM Design Architect. This role focuses on the design and integration of advanced DRAM technologies for next-generation AI and data-intensive systems. Candidates should have over 10 years of experience in engineering/design, with expertise in nanometer CMOS, DRAM architecture, and 3D integration. Comprehensive benefits are included, along with opportunities for professional growth in nanotechnology.