GaN/SiC Power Devices Test Engineer

Navitas Semiconductor

Torrance (CA)

On-site

USD 65,000 - 90,000

Full time

14 days+

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Job summary

Navitas Semiconductor in Torrance, CA seeks a Junior Test Engineer to support SiC and GaN power-device characterization. You will perform on-wafer and packaged-device measurements, execute standard tests, and help maintain accurate data and logs under supervision.

Ideal candidates have a technical degree and up to 3 years in semiconductor testing, with strong attention to detail and safe lab practices. On-site role requiring US work authorization and collaboration with engineers.

Qualifications

Bachelor’s degree in Electrical Engineering or related field, or equivalent hands‑on lab experience.
0–3 years of semiconductor test or device characterization experience.
Basic understanding of electrical measurements and safe lab practices.
Ability to follow detailed test instructions accurately and repeatedly.
Comfort with lab instruments such as oscilloscopes, SMBs, SMUs, curve tracers, and probe stations.
Strong attention to data, sample handling, and documentation.
On-site Torrance, CA; U.S. citizen or green card required.

Responsibilities

Perform on-wafer electrical measurements on SiC and GaN power devices using probe stations and analyzers.
Conduct packaged-device measurements following test instructions from engineers.
Execute standard characterization tests: DC parametrics, leakage, breakdown, Vth, Rds(on), capacitance, switching tests.
Set up fixtures, cables, adapters, and measurement equipment per procedures and safety rules.
Record and organize measurement data for analysis by device engineers.
Document test conditions, wafer and package identifiers, and equipment settings clearly.
Support repeat measurements, data verification, and troubleshooting when results vary.
Maintain lab cleanliness, safety, and proper handling of high-voltage equipment.