Test Engineer - SiC & GaN Power Devices

Navitas Semiconductor Usa; Torrance (CA); On-site; USD 90,000 - 130,000; Full time

Job summary

Navitas Semiconductor Usa in Torrance, CA is seeking a Test Engineer - SiC & GaN Power Devices to perform on-wafer and packaged device-level measurements on SiC and GaN power-semiconductor devices. You will work under device engineers to execute test plans, collect data, and ensure characterization activities are completed safely and on schedule.

The role requires a bachelor’s degree in a related field, 0–3 years of test experience, and meticulous documentation.

Qualifications

• Bachelor’s degree in Electrical Engineering, Electronics Engineering, Physics, Materials Science, or related field; equivalent hands-on lab experience considered.
• 0–3 years of semiconductor test experience or similar lab environment.
• Basic understanding of semiconductor devices and safe lab practices.
• Ability to follow detailed test instructions accurately.

Responsibilities

• Perform on-wafer electrical measurements on SiC and GaN power devices using probe stations and lab instruments.
• Conduct packaged device measurements per test instructions from device engineers.
• Execute standard device characterization tests including DC parametric measurements, leakage, breakdown, threshold voltage, Rds(on), diode characteristics, capacitance, and switching tests.
• Set up test fixtures, probes, cables, adapters, and equipment per procedures and safety rules.
• Collect, review, label, and organize measurement data for engineers to analyze.
• Document test conditions, wafer and package identifiers, equipment settings, and observations clearly.
• Support repeat measurements, data verification, and troubleshooting as needed.
• Maintain lab cleanliness and safe operating practices for high-voltage equipment.
• Collaborate with device team to prioritize samples and communicate progress.

Skills

Attention to detail

Laboratory safety

Documentation

Team collaboration

Education

Bachelor’s degree in Electrical Engineering

Tools

Oscilloscopes

Multimeters

Source‑measure units

Curve tracers

Probe stations

Job description

Job Details

Job Location: Torrance, CA 90503

Position Type: Full Time

Salary Range: $90,000.00 - $130,000.00 Salary/year

Job Purpose

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications.

We are seeking a Test Engineer - SiC & GaN Power Devices to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics.

The Junior Test Engineer will support the Technology / CTO team in Torrance by performing on-wafer and packaged device-level electrical measurements on silicon carbide (SiC) and gallium nitride (GaN) power semiconductor devices. Working under the direction of device engineers and senior members of the device team, this role will execute defined test plans, collect accurate measurement data, maintain organized records, and help ensure that device characterization work is completed safely, consistently, and on schedule.

Key Responsibilities and Duties

• Perform on-wafer electrical measurements on SiC and GaN power devices using probe stations, parameter analyzers, curve tracers, source‑measure units, high‑voltage test equipment, and related laboratory instrumentation.
• Perform packaged device‑level measurements on SiC and GaN power devices according to test instructions provided by device engineers.
• Execute standard test procedures for device characterization, including DC parametric measurements, leakage, breakdown, threshold voltage, on‑resistance, diode characteristics, capacitance, switching‑related measurements, and other device‑level tests as assigned.
• Set up test fixtures, probes, cables, adapters, and measurement equipment following approved procedures and safety requirements.
• Collect, review, label, and organize measurement data in approved formats so that device engineers can analyze results efficiently.
• Document test conditions, sample identifiers, wafer locations, package identifiers, equipment settings, anomalies, and observations clearly and consistently.
• Support repeat measurements, correlation checks, data verification, and basic troubleshooting when results appear inconsistent or unexpected.
• Maintain cleanliness, organization, and safe operating practices in the test lab, including proper handling of wafers, packaged devices, fixtures, and high‑voltage equipment.
• Work closely with members of the device team to prioritize samples, understand test instructions, and communicate progress or issues promptly.
• Help maintain test logs, equipment usage records, calibration awareness, and laboratory documentation as required.

Required Qualifications

• Bachelor’s degree in Electrical Engineering, Electronics Engineering, Physics, Materials Science, or a related technical field; equivalent hands‑on laboratory experience may be considered.
• 0–3 years of experience in semiconductor test, power electronics testing, device characterization, electronics laboratory work, or a related technical environment.
• Basic understanding of semiconductor devices, electrical measurements, and safe laboratory practices.
• Ability to follow detailed test instructions accurately and repeatably.
• Comfort working with laboratory instruments such as oscilloscopes, multimeters, source‑measure units, parameter analyzers, curve tracers, power supplies, probe stations, or similar equipment.
• Strong attention to detail in sample handling, data collection, file naming, test documentation, and communication of observations.
• Ability to work on‑site in Torrance, CA and collaborate closely with engineers, technicians, and technology‑team members.
• Must be a U.S. citizen or U.S. permanent resident / green card holder due to program and technology access requirements.

Preferred Qualifications

• Hands‑on experience with wafer probing, packaged power-device testing, high‑voltage measurements, or power semiconductor characterization.
• Exposure to SiC, GaN, MOSFETs, diodes, HEMTs, power modules, or wide‑bandgap semiconductor devices.
• Experience using data tools such as Excel, JMP, Python, MATLAB, LabVIEW, or similar tools for organizing, plotting, or reviewing measurement data.
• Familiarity with ESD controls, wafer handling, device handling, test fixtures, and laboratory safety practices.
• Ability to perform repetitive measurements carefully while maintaining data accuracy and sample traceability.