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TI is seeking an innovative GaN Device Project Lead Engineer to join our Gallium Nitride (GaN) Technology Development Team in Dallas, TX. You will lead development, characterization, and optimization of GaN power devices for high-volume manufacturing, collaborating with fab, Kilby Labs, and business units to deliver high-performance devices.
The ideal candidate has 3+ years of hands-on GaN or compound semiconductor experience, strong device physics knowledge, and excellent problem-solving and
TI is seeking an innovative GaN Device Project Lead Engineer to join our Gallium Nitride (GaN) Technology Development Team in Dallas, TX. You will lead development, characterization, and optimization of GaN power devices for high-volume manufacturing, collaborating with fab, Kilby Labs, and business units to deliver high-performance devices.
The ideal candidate has 3+ years of hands-on GaN or compound semiconductor experience, strong device physics knowledge, and excellent problem-solving and