GaN Power Device Lead Engineer — Innovate & Scale

118-WW TMG MFG OPS

Dallas (TX)

On-site

USD 110,000 - 170,000

Full time

14 days+
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Job summary

TI is seeking an innovative GaN Device Project Lead Engineer to join our Gallium Nitride (GaN) Technology Development Team in Dallas, TX. You will lead development, characterization, and optimization of GaN power devices for high-volume manufacturing, collaborating with fab, Kilby Labs, and business units to deliver high-performance devices.

The ideal candidate has 3+ years of hands-on GaN or compound semiconductor experience, strong device physics knowledge, and excellent problem-solving and

Qualifications

  • Master's in Electrical Engineering or related field.
  • 3+ years hands-on GaN or compound semiconductor device/process development.
  • Strong knowledge of III-V materials and semiconductor processing.
  • Experience with design-for-manufacturability and DOE planning.
  • Ability to work across cross-functional teams in a fast-paced R&D environment.

Responsibilities

  • Lead GaN device simulations (TCAD) and device design/layout.
  • Develop robust process flows and execute DOEs.
  • Collaborate with fab/manufacturing to ensure device manufacturability.
  • Work with reliability engineers to meet device reliability requirements.
  • Perform failure root-cause investigations to drive improvements.

Skills

GaN devices
DOE planning
Device characterization
Cross-functional collaboration
Lab skills

Education

Master's in Electrical Engineering
PhD in Electrical Engineering (preferred)

Tools

TCAD
Fabrication tools
DOE software

Job description

TI is seeking an innovative GaN Device Project Lead Engineer to join our Gallium Nitride (GaN) Technology Development Team in Dallas, TX. You will lead development, characterization, and optimization of GaN power devices for high-volume manufacturing, collaborating with fab, Kilby Labs, and business units to deliver high-performance devices.

The ideal candidate has 3+ years of hands-on GaN or compound semiconductor experience, strong device physics knowledge, and excellent problem-solving and

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