Senior GaN Power Tech Lead

Power-Integrations; San Jose (CA); On-site; USD 140,000 - 210,000; Full time

Job summary

Power Integrations seeks a Senior Staff / Staff Engineer – GaN Technologist to drive next‑generation high‑voltage GaN technologies for power conversion. Focus on lateral GaN HEMT device tech enabling higher performance, manufacturability, reliability, and scalability across voltage classes.

The successful candidate will define device concepts, lead development activities, and partner with process, reliability, packaging, and manufacturing teams worldwide to accelerate productization and

Qualifications

• Ph.D. or M.S. in Electrical Engineering, Physics, Materials Science, or a related discipline.
• Minimum of 10 years of experience in semiconductor device development with GaN technologies.
• Deep understanding of high-voltage GaN HEMT device physics and operation.
• Experience developing, characterizing, and qualifying GaN power semiconductor technologies.
• Strong background in semiconductor process technology, device characterization, reliability, and failure analysis.
• Experience interpreting electrical, physical, and reliability data to drive technology improvements.
• Proven ability to lead technical projects and influence cross-functional teams.
• Excellent written and verbal communication skills.

Responsibilities

• Lead development and optimization of high-voltage GaN HEMT technologies for commercial power semiconductor products.
• Define and execute technology development roadmaps for future GaN devices.
• Drive improvements in key device metrics including RDS(on), breakdown voltage, switching performance, reliability.
• Analyze device physics, failure mechanisms, and reliability for technology advancement.
• Collaborate with process integration to develop and qualify new device architectures and fab processes.
• Support technology transfer from R&D into product development and high-volume manufacturing.
• Guide silicon validation, characterization, and technology qualification activities.
• Develop TCAD simulations and analytical models to support device optimization and direction.
• Publish technical findings internally and contribute to patent generation.
• Mentor engineers and provide technical leadership across cross-functional teams.

Skills

GaN technologies

Device physics

Leadership

Data interpretation

Written & verbal communication

Education

Ph.D. or M.S. in Electrical Engineering, Physics, Materials Science, or related discipline

Tools

TCAD simulation tools

Advanced device modeling

Job description

Power Integrations seeks a Senior Staff / Staff Engineer – GaN Technologist to drive next‑generation high‑voltage GaN technologies for power conversion. Focus on lateral GaN HEMT device tech enabling higher performance, manufacturability, reliability, and scalability across voltage classes.

The successful candidate will define device concepts, lead development activities, and partner with process, reliability, packaging, and manufacturing teams worldwide to accelerate productization and