GaN Power Device Engineer - DC Characterization

microTECH Global Limited; United States; On-site; USD 80,000 - 100,000; Full time

Job summary

A leading technology firm in the United States is seeking a motivated Device Engineer to support GaN power device development. The role focuses on DC electrical characterisation, data analysis, and collaboration with cross-functional teams and external partners. The ideal candidate should have a Bachelor's degree in Electrical Engineering, demonstrated experience with semiconductor processing, and familiarity with reliability concepts. This full-time position offers an opportunity to work in a dynamic environment.

Qualifications

• Strong background in semiconductor processing, specifically GaN power devices.
• Experience with DC electrical characterisation and data analysis techniques.
• Ability to troubleshoot performance, yield, and reliability issues in devices.

Responsibilities

• Perform DC electrical characterisation of GaN power devices using high-precision techniques.
• Analyse and interpret electrical data to support development and optimisation.
• Collaborate with teams and interface with external partners for device testing.

Skills

DC electrical characterisation

Data analysis

Collaboration with cross-functional teams

Education

Bachelor’s degree in Electrical Engineering, Physics, or a related field

Tools

Statistical software (e.g., JMP)

Job description

A leading technology firm in the United States is seeking a motivated Device Engineer to support GaN power device development. The role focuses on DC electrical characterisation, data analysis, and collaboration with cross-functional teams and external partners. The ideal candidate should have a Bachelor's degree in Electrical Engineering, demonstrated experience with semiconductor processing, and familiarity with reliability concepts. This full-time position offers an opportunity to work in a dynamic environment.