Device Engineer – GaN Power Devices

microTECH Global Limited; United States; On-site; USD 80,000 - 100,000; Full time

Job summary

A leading technology firm in the United States is seeking a motivated Device Engineer to support GaN power device development. The role focuses on DC electrical characterisation, data analysis, and collaboration with cross-functional teams and external partners. The ideal candidate should have a Bachelor's degree in Electrical Engineering, demonstrated experience with semiconductor processing, and familiarity with reliability concepts. This full-time position offers an opportunity to work in a dynamic environment.

Qualifications

• Strong background in semiconductor processing, specifically GaN power devices.
• Experience with DC electrical characterisation and data analysis techniques.
• Ability to troubleshoot performance, yield, and reliability issues in devices.

Responsibilities

• Perform DC electrical characterisation of GaN power devices using high-precision techniques.
• Analyse and interpret electrical data to support development and optimisation.
• Collaborate with teams and interface with external partners for device testing.

Skills

DC electrical characterisation

Data analysis

Collaboration with cross-functional teams

Education

Bachelor’s degree in Electrical Engineering, Physics, or a related field

Tools

Statistical software (e.g., JMP)

Job description

Device Engineer – GaN Power Devices

Location: US
Type: Full-time

We are seeking a motivated and technically strong Device Engineer to support GaN device development activities. This role focuses on DC electrical characterisation, data analysis, and collaboration with external fabrication and test facilities.

Key Responsibilities

• Perform DC electrical characterisation of GaN power devices, including Id–Vgs, Id–Vds, CV, and breakdown measurements using high-precision techniques
• Analyse, interpret, and summarise electrical data to support device development, process optimisation, and qualification
• Plan and evaluate experiments, including design of experiments (DOE) related to device design, layout, and process changes
• Apply knowledge of semiconductor processing and GaN device physics to troubleshoot and resolve performance, yield, and reliability issues
• Collaborate with cross-functional teams including design, layout, and process engineering
• Interface with external fabrication and test partners, including technical discussions, data reviews, and occasional on-site support

Preferred Skills & Experience

• Familiarity with reliability concepts and qualification methods for GaN power devices
• Understanding of GaN epitaxial structures and their impact on device performance
• Experience with data analysis tools such as JMP or similar statistical software

Qualifications

• Bachelor’s degree in Electrical Engineering, Physics, or a related field

Please get in touch with Christina McGuire to hear more about this position!