GaN Plasma Etch Process Innovator

118-WW TMG MFG OPS; Lenexa, Town of Texas (KS, WI); On-site; USD 120,000 - 180,000; Full time

Job summary

118-WW TMG MFG OPS seeks an Advanced GaN Process Development Engineer to advance plasma etch processes for next‑gen GaN devices. You will design experiments, analyze data, and partner with integration, metrology, manufacturing to enable robust transfer into high‑volume production.

The ideal candidate has 5+ years in semiconductor plasma/dry etch, strong DOE and SPC skills, and hands‑on experience with SEM, CD‑SEM and ellipsometry. Excellent collaboration and problem‑solving are essential.

Qualifications

• 5+ years of semiconductor plasma/dry etch process development experience.
• Bachelor's in engineering, science, or related STEM discipline.
• Strong SPC, engineering change control and process release experience.
• Experience with DOE methodologies and statistical analysis.
• Metrology techniques including SEM, CD-SEM, ellipsometry and defect inspection tools.

Responsibilities

• Develop and optimize plasma etch processes for advanced devices.
• Design and execute experiments (DOE) to improve metrics such as etch rate, selectivity, CD control, profile, defectivity and uniformity.
• Characterize process performance and establish robust process windows.
• Evaluate new chemistries, hardware configurations, and chamber technologies.
• Support technology transfers from development into manufacturing and establish release documentation.
• Partner with equipment engineering to improve tool capability and reliability.
• Analyze data with statistical methods to identify root causes and drive improvements.
• Collaborate with Process Integration, Manufacturing, Yield, Metrology, QA and other teams; mentor juniors.

Skills

DOE methodologies

Statistical data analysis

Cross-functional collaboration

Python

Problem solving

Education

Bachelor's degree in engineering or science

Tools

SEM

CD-SEM

Ellipsometry

Defect inspection tools

Job description

118-WW TMG MFG OPS seeks an Advanced GaN Process Development Engineer to advance plasma etch processes for next‑gen GaN devices. You will design experiments, analyze data, and partner with integration, metrology, manufacturing to enable robust transfer into high‑volume production.

The ideal candidate has 5+ years in semiconductor plasma/dry etch, strong DOE and SPC skills, and hands‑on experience with SEM, CD‑SEM and ellipsometry. Excellent collaboration and problem‑solving are essential.