Dry/Plasma Etch GaN Process Development Engineer (SM1)

118-WW TMG MFG OPS; Lenexa, Town of Texas (KS, WI); On-site; USD 120,000 - 180,000; Full time

Job summary

118-WW TMG MFG OPS seeks an Advanced GaN Process Development Engineer to advance plasma etch processes for next‑gen GaN devices. You will design experiments, analyze data, and partner with integration, metrology, manufacturing to enable robust transfer into high‑volume production.

The ideal candidate has 5+ years in semiconductor plasma/dry etch, strong DOE and SPC skills, and hands‑on experience with SEM, CD‑SEM and ellipsometry. Excellent collaboration and problem‑solving are essential.

Qualifications

• 5+ years of semiconductor plasma/dry etch process development experience.
• Bachelor's in engineering, science, or related STEM discipline.
• Strong SPC, engineering change control and process release experience.
• Experience with DOE methodologies and statistical analysis.
• Metrology techniques including SEM, CD-SEM, ellipsometry and defect inspection tools.

Responsibilities

• Develop and optimize plasma etch processes for advanced devices.
• Design and execute experiments (DOE) to improve metrics such as etch rate, selectivity, CD control, profile, defectivity and uniformity.
• Characterize process performance and establish robust process windows.
• Evaluate new chemistries, hardware configurations, and chamber technologies.
• Support technology transfers from development into manufacturing and establish release documentation.
• Partner with equipment engineering to improve tool capability and reliability.
• Analyze data with statistical methods to identify root causes and drive improvements.
• Collaborate with Process Integration, Manufacturing, Yield, Metrology, QA and other teams; mentor juniors.

Skills

DOE methodologies

Statistical data analysis

Cross-functional collaboration

Python

Problem solving

Education

Bachelor's degree in engineering or science

Tools

SEM

CD-SEM

Ellipsometry

Defect inspection tools

Job description

Change the world. Love your job.
We are seeking a highly motivated Advanced GaN Process Development Engineer to join our Plasma Etch Process Development team. This role is responsible for developing, optimizing, and transferring advanced plasma etch processes supporting next-generation GaN semiconductor technologies. The engineer will work closely with integration, equipment, metrology, and manufacturing teams to drive technology innovation, improve process capability, and enable successful product ramp into high-volume manufacturing.

The ideal candidate possesses strong technical expertise in plasma etch fundamentals, semiconductor process development, statistical data analysis, and cross-functional problem solving.

The responsibilities of a Manufacturing Development Process Engineer in this role include:

• Process Development

  • Develop and optimize plasma etch processes for advanced semiconductor devices.
  • Design and execute experiments (DOE) to improve critical process metrics, including:
    • Etch rate
    • Selectivity
    • Critical dimension (CD) control
    • Profile control
    • Defectivity
    • Uniformity
  • Characterize process performance and establish process windows for manufacturing robustness.
  • Evaluate new process chemistries, hardware configurations, and chamber technologies.

• Technology Introduction

  • Support development and qualification of next-generation etch technologies.
  • Collaborate with device integration teams to meet product and technology requirements.
  • Drive process readiness for technology transfers from development into manufacturing.
  • Establish process specifications, control plans, and release documentation.

• Tool and Equipment Engineering

  • Partner with equipment engineering teams to improve tool capability, productivity, and reliability.
  • Lead chamber matching, equipment qualification, and process performance improvement activities.
  • Support installation and startup of new etch platforms.

• Data Analysis & Continuous Improvement

  • Analyze complex process datasets using statistical methods and data analytics tools.
  • Identify root causes of process excursions and implement corrective actions.
  • Lead yield improvement and defect reduction initiatives.
  • Utilize SPC methodologies to monitor and improve process stability.

• Cross-Functional Collaboration

  • Work closely with:
    • Process Integration
    • Manufacturing
    • Yield Engineering
    • Metrology
    • Equipment Engineering
    • Quality and Reliability teams
  • Present technical findings and recommendations to management and key stakeholders.
  • Mentor junior engineers and technicians as needed.

Minimum requirements:

• 5+ years of semiconductor plasma/dry etch process development experience.
• Bachelors in an engineering, science, or related STEM discipline
• Strong foundation in statistical process control, engineering change control and process release strategies
• Experience with DOE methodologies and statistical analysis.
• Familiarity with metrology techniques including SEM, CD-SEM, ellipsometry and defect inspection tools.

Preferred qualifications:

• Experience in Gallium Nitride (GaN) and/or similar wide-bandgap III-V nitrides processes and technology development
• Strong foundation in statistical process control, engineering change control and process release strategies
• Proficiency with Python, Claude, or other AI models or tools is a plus
• Demonstrated strong analytical and problem solving skills resulting in innovative and creative process solutions
• Experience with process development and transfer on etch platforms (LAM, AMAT, TEL, etc)
• Strong verbal and written communication skills
• Ability to work in teams and collaborate effectively with people in different job functions
• Strong time management skills that enable on-time project delivery
• Demonstrated ability to build strong, influential relationships
• Ability to work effectively in a fast-paced and rapidly changing environment
• Ability to take the initiative and drive for result