GaN Epitaxy Growth Engineer — Innovate & Optimize

IQE; Taunton (MA); On-site; USD 90,000 - 130,000; Full time

Benefits offered by this job

Comprehensive health insurance

401k with company match

Professional development

Life and Disability Insurance

Long service awards

Job summary

IQE is seeking a GaN Epi Development Engineer to join our Technology Group. You will develop epitaxial growth processes for GaN-based device structures and work with GaN MOCVD reactors to create growth recipes and analyze data.

You will collaborate with internal engineering and manufacturing teams, support new product introductions, and develop manufacturing specifications to ensure high quality and cost-effective manufacturing.

Qualifications

• Master's or PhD in Science or Engineering required.
• At least 2 years of GaN epitaxial growth experience using MOCVD.
• Strong understanding of III-N crystal growth equipment and device performance.
• Excellent written and verbal communication for cross-team collaboration.

Responsibilities

• Develop epitaxial growth processes for GaN-based devices.
• Create growth recipes and analyze reactor output data.
• Provide technical expertise to ensure IQE products are best in class.
• Collaborate with local process engineering to ensure state-of-the-art material.
• Support new product introduction and customer inquiries.

Skills

GaN Epi growth

MOCVD

Materials characterization

III-N device fabrication

Communication skills

Education

Master's degree or PhD in Science or Engineering

Tools

MOCVD reactors

Crystal growth equipment

Job description

IQE is seeking a GaN Epi Development Engineer to join our Technology Group. You will develop epitaxial growth processes for GaN-based device structures and work with GaN MOCVD reactors to create growth recipes and analyze data.

You will collaborate with internal engineering and manufacturing teams, support new product introductions, and develop manufacturing specifications to ensure high quality and cost-effective manufacturing.