GaN Epitaxy Development Engineer

IQE; Taunton (MA); On-site; USD 90,000 - 130,000; Full time

Benefits offered by this job

Comprehensive health insurance

401k with company match

Professional development

Life and Disability Insurance

Long service awards

Job summary

IQE is seeking a GaN Epi Development Engineer to join our Technology Group. You will develop epitaxial growth processes for GaN-based device structures and work with GaN MOCVD reactors to create growth recipes and analyze data.

You will collaborate with internal engineering and manufacturing teams, support new product introductions, and develop manufacturing specifications to ensure high quality and cost-effective manufacturing.

Qualifications

• Master's or PhD in Science or Engineering required.
• At least 2 years of GaN epitaxial growth experience using MOCVD.
• Strong understanding of III-N crystal growth equipment and device performance.
• Excellent written and verbal communication for cross-team collaboration.

Responsibilities

• Develop epitaxial growth processes for GaN-based devices.
• Create growth recipes and analyze reactor output data.
• Provide technical expertise to ensure IQE products are best in class.
• Collaborate with local process engineering to ensure state-of-the-art material.
• Support new product introduction and customer inquiries.

Skills

GaN Epi growth

MOCVD

Materials characterization

III-N device fabrication

Communication skills

Education

Master's degree or PhD in Science or Engineering

Tools

MOCVD reactors

Crystal growth equipment

Job description

IQE is a leading global supplier of compound semiconductor wafers and advanced materials. As one of the only compound semiconductor epitaxy foundries with worldwide presence and scalable manufacturing, IQE drives technology growth. Our vision is to be the top provider of advanced semiconductor materials by delivering exceptional quality, service, and innovation, making us the first choice for customers. Our strength comes from our diverse, expert workforce and a culture built on integrity, accountability, excellence, teamwork, and valuing people.

At IQE, we are committed to reaching Net Zero and creating a sustainable future. We actively strive to reduce our carbon footprint, invest in green initiatives, and embed sustainability into everything we do. Join us in driving meaningful change and making a lasting impact on the environment.

About the Role

The GaN Epi Development Engineer will join IQE's Technology Group and play a key role in developing epitaxial growth processes for GaN-based device structures. This position will work closely with internal engineering and manufacturing teams as well as customers to ensure IQE products meet or exceed performance, quality, and manufacturability requirements.

Key Responsibilities:

• Develop epitaxial growth processes for GaN-based device structures.
• Work with GaN MOCVD reactors to create growth recipes and analyze reactor output data.
• Provide technical expertise to help ensure IQE products are best in class.
• Analyze product, process, and materials data to identify correlations with critical-to-function parameters and drive continuous improvement.
• Provide technical support to internal teams and develop manufacturing specifications that support product quality and cost-effective manufacturing.
• Create and manage manufacturing specifications as assigned.
• Collaborate closely with local process engineering teams to ensure established processes and recipes produce state-of-the-art material.
• Support new product introduction, customer inquiries, project management, and process documentation.

About You

Experience Requirements for the GaN Epi Development Engineer

• At least 2 years of experience with epitaxial growth of GaN-based semiconductors using MOCVD.
• Strong understanding of III-N crystal growth equipment and the impact of epitaxial growth processes on device performance.
• Proficiency with materials characterization techniques for III-N semiconductors.
• Familiarity with III-N electronic and optoelectronic device fabrication and device testing.
• Excellent written and verbal communication skills with the ability to effectively collaborate with internal teams and external customers.

Qualification Requirements for the GaN Epi Development Engineer:

• Master's degree or PhD in Science or Engineering is required.
• Ability to work in both office and cleanroom/fab environments as required.
• Ability to gown appropriately for work in a cleanroom fabrication environment.
• Ability to occasionally travel by air or automobile as business needs require.

Why should you join us?

All our employees benefit from:

• Professional Development and career pathways
• Market competitive base salaries reviewed bi-annually
• Comprehensive health insurance offering medical, prescription, dental and vision coverage.
• Company paid Life and Disability Insurance.
• Long service awards 5, 10, 15, 20, 25 and 30 years
• Employee Assistance Program (Free family, legal, financial and counselling support 24/7 Access)
• 401k Plan with company match of up to 50% on the first 6% of the employee’s contributions

IQE is an equal opportunities employer that values diversity at all levels. All qualified applicants will receive consideration for employment without regard to race, colour, religion, sex, sexual orientation, gender identity, or national origin.