Senior GaN/GaAs Process Integration Engineer

Qorvo, Inc.; Richardson (TX); On-site; USD 140,000 - 170,000; Full time

Job summary

Qorvo, Inc. in Richardson, TX, is seeking an experienced Principal Process Integration Engineer to lead a cross-functional team in developing and releasing GaN/GaAs technology, products, and processes for RF Compound Semiconductor ICs.

The role collaborates with business units, designers, program managers, customers, and fabrication teams to ensure manufacturability, reliability, and performance, with a strong focus on process flows, testing, and yield improvements.

Qualifications

• Bachelor’s degree in Electrical Engineering, Chemical Engineering, or Physics.
• 5+ years (or equivalent) experience in process development/integration or yield enhancement in semiconductors.
• Expertise in developing process flows and design elements to achieve required circuit performance.
• Ability to design corner experiments to identify manufacturability issues and key process sensitivities.
• Experience in designing and monitoring in-line, DC, and RF probe test functions and structures.
• Experience identifying, analyzing, and resolving yield and performance limiting factors by identifying root causes and implementing improvements.
• Proficiency in collecting, analyzing, and using characterization data to verify new technology meets specifications.
• Knowledge of defining design rules for new technology and processes to support new products.

Responsibilities

• Lead cross function team to develop new GaN/GaAs technology/product/process and qualify/release them to production
• Work with business units, designers, program managers, customers, process and fabrication teams to produce reliable, RF Compound Semiconductor ICs that meet specific technology requirements
• Develop process flows and design elements to achieve required circuit performance
• Design corner experiments to identify the potential manufacturability issues and key process sensitivities to ensure released technology manufacturable and reliable
• Design and Monitor in-line, DC and RF probe test functions, structures to support new technology and process production release.
• Collect, analyze, and use characterization data to verify new technology meeting specifications
• Identify, analyze, and resolve yield and performance limiting factors by identifying root causes and implementing improvements
• Defined the design rules of the new GaN technology and process and their associated infrastructures to support new products.

Skills

Process development

Experimental design

RF probe testing

Data analysis

Yield troubleshooting

Design rules

Education

Bachelor’s degree in Electrical/ Chemical Engineering or Physics

Masters/PhD in Electrical Engineering, Chemical Engineering, or Physics (preferred)

Tools

CAD (Mentor)

Spotfire

JMP

Programming skills

Job description

Qorvo, Inc. in Richardson, TX, is seeking an experienced Principal Process Integration Engineer to lead a cross-functional team in developing and releasing GaN/GaAs technology, products, and processes for RF Compound Semiconductor ICs.

The role collaborates with business units, designers, program managers, customers, and fabrication teams to ensure manufacturability, reliability, and performance, with a strong focus on process flows, testing, and yield improvements.