DRAM Device Engineer Intern — AI-Driven Process & Yield

Micron; Boise (ID); Sur place; USD 34 000 - 55 000; Plein temps

Avantages offerts par ce poste

Medical, dental and vision plans

Paid time off and holidays

Paid family leave

Income protection if unable to work

Résumé du poste

Micron Technology in Boise, Idaho invites an Intern in Process Integration and Device Engineering to contribute to next-generation DRAM development in the manufacturing fab. This role offers hands-on experience with cutting-edge technologies and cross-functional collaboration.

You will support integration across DRAM loops, analyze electrical data for yield improvements, present updates to leadership, and gain exposure to AI-powered problem solving in a fast-paced semiconductor environment.

Qualifications

• Strong knowledge of semiconductor devices.
• CMOS or capacitor knowledge is preferred.
• Knowledge of DRAM/NAND/NOR.
• Knowledge of statistical data analysis.
• Knowledge of semiconductor process flow.
• Knowledge of DRAM process flow is a plus.
• Good communication and self-motivated.

Responsabilités

• Support integration of process modules across DRAM loops.
• Analyze electrical and inline data to identify yield detractors.
• Collaborate with cross-functional teams to drive continuous improvement.
• Document findings and present updates to engineering and leadership teams.
• Leverage AI tools to improve problem solving efficiency.

Connaissances

Semiconductor devices

Data analysis

Communication skills

Self-motivated

Formation

PhD student in Electrical Engineering

Description du poste

Micron Technology in Boise, Idaho invites an Intern in Process Integration and Device Engineering to contribute to next-generation DRAM development in the manufacturing fab. This role offers hands-on experience with cutting-edge technologies and cross-functional collaboration.

You will support integration across DRAM loops, analyze electrical data for yield improvements, present updates to leadership, and gain exposure to AI-powered problem solving in a fast-paced semiconductor environment.