Senior CMOS analog/mixed signal design Engineer (m/f/d)

HighTech Startbahn GmbH (HTSB); Lombardia; Hybrid; EUR 60,000 - 90,000; Full time

Job summary

Ferroelectric Memory GmbH (FMC) in Dresden Germany is seeking an experienced IC Design Engineer (m/f/d) with strong CMOS analog/mixed-signal expertise and a focus on emerging NVM devices based on hafnium oxide technology. You will collaborate with international teams in Milan and Dresden to translate memory concepts into robust silicon.

The ideal candidate has 5–10 years in CMOS IC design (Analog/Mixed Signal), hands-on Cadence/Virtuoso, Verilog for modeling, and a solid understanding of memory

Qualifications

• Experience in CMOS analog/mixed-signal design and NVM device concepts.
• Proficient with Cadence tools and Verilog for modeling/verification.
• Strong cross‑functional collaboration and English proficiency.

Responsibilities

• Design and develop emerging NVM memory devices based on hafnium oxide for FMC’s ferroelectric memory product portfolio.
• Define specifications and support integration of analog and mixed-signal blocks into memory architecture.
• Design analog circuits for NVM memories (sense amps, decoders, bandgaps, HV regulators, ADCs, etc.).
• Run PVT simulations and circuit verification, including parasitic extraction.
• Collaborate with layout engineers to optimize robustness, matching, and area.
• Contribute to post‑silicon verification, debug, and optimization of memory IP and test chips.

Skills

CMOS IC design

Analog/Mixed-Signal

NVM device design

Cadence

Verilog

C programming

Digital design concepts

Education

Degree in Electrical Engineering

Tools

Cadence DFII

Virtuoso

Spice

Job description

Role Overview

We are looking for an experienced IC Design Engineer (m/f/d) with strong expertise in CMOS analog/mixed‑signal design and emerging NVM devices to help develop FMC’s next‑generation ferroelectric memory products based on hafnium oxide technology. You will work in close collaboration with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon.

Must Have

CMOS IC design (Analog/Mixed Signal), NVM Device Design, Design tools: Cadence, Verilog, Programming Ability: C, Verilog, Digital Design Concepts

Responsibilities

• Design and develop emerging NVM memory devices based on hafnium oxide technology for FMC’s ferroelectric memory product portfolio.
• Define specifications and support the integration of analog and mixed‑signal blocks into the overall memory architecture.
• Design analog circuits for NVM memories (sense amplifiers, decoders, bandgaps, HV regulators, ADCs, etc.).
• Run PVT simulations and circuit verification, including parasitic extraction, to ensure performance and reliability.
• Collaborate closely with layout engineers to optimize robustness, matching, and area.
• Contribute to post‑silicon verification, debug, and optimization of memory IP and test chips.

Your profile

• 5-10 Years of experience and a Degree in Electrical Engineering or related field.
• Strong background in CMOS IC design (analog/mixed signal) and NVM device design.
• Hands‑on experience with Cadence design environment and Verilog for modeling or verification.
• Familiarity with standard design and simulation flows (e.g., Cadence DFII, Virtuoso, Spice, Verilog‑A).
• Relevant experience in analog/mixed‑signal CMOS and memory/NVM design.
• Good knowledge of CMOS device physics and circuit behavior over PVT.
• Strong problem‑solving skills and ability to work effectively in cross‑functional teams.
• Fluent in English.

About us

Ferroelectric Memory GmbH (FMC)is a pioneering semiconductor company based in Dresden, Germany, focused on next-generation non‑volatile memory technology.
Founded in 2016, FMC is at the forefront of innovation in ferroelectric memory, enabling faster, more energy-efficient, and scalable solutions for future computing systems.

Our team combines deep expertise in semiconductor physics, device engineering, and system design to redefine memory architectures for emerging applications in AI, IoT, and high-performance computing.

Join us and be part of a team shaping the future of memory technology.

Why FMC?

• Cutting-edge memory technology
• Strong presence in the european semiconductor ecosystem
• High ownership and impact-driven roles
• International and collaborative team
• Direct contribution to AI and next‑generation computing