Principal RF Design Engineer

TagoreTech Inc.; Kolkata District; Presencial; INR 2.500.000 - 6.000.000; Jornada completa

Ventajas ofrecidas por este puesto de trabajo

Competitive compensation

Collaborative culture

Benefits

Descripción de la vacante

TagoreTech Inc. is actively seeking an experienced Principal RF Design Engineer to lead development of high-power RF front-end components, including switches, PAs, LNAs and FEMs, in GaN/GaAs processes.

You will shape product roadmaps, drive IP, and coordinate with marketing, design management and test teams from concept through production. The role demands deep transistor-level design expertise, strong CAD/EM tooling proficiency, and hands-on lab characterization across wide temperature ranges.

Formación

• MSEE or PhD with extensive hands-on RFIC/MMIC design experience.
• Proven transistor-level design experience in GaN or GaAs processes.
• Proficient with Cadence, Keysight ADS or AWR MWO and non-linear modeling.
• Experience with 2D/3D EM simulation tools (HFSS, Sonnet).

Responsabilidades

• Lead the design and development of high-power RF front-end components: switches, PAs, LNAs and FEMs.
• Architect future RF product concepts and drive roadmaps with cross-functional teams.
• Drive IP development and high-power packaging with thermal/electrical constraints.
• Perform transistor-level design and non-linear modeling.
• Run 2D/3D EM modeling for layout/package parasitics and board interactions.
• Lead lab characterization and validation across power, frequency, temperature.
• Provide technical oversight and mentor junior RF engineers.

Conocimientos

RFIC design experience

GaN/GaAs process knowledge

Transistor-level design

Cadence/Keysight/AWR tools

2D/3D EM simulation

Lab characterization experience

Educación

MSEE

PhD

Herramientas

HFSS

Sonnet

VNA

Spectrum analyzers

Descripción del empleo

About Us

TagoreTech is developing disruptive high-power RF technology for next-generation communication systems. We are a fabless semiconductor company using wide bandgap processes and innovative circuit design to solve complex RF challenges. Our product portfolio includes high-power RF switches, low-noise amplifiers and power amplifiers. These are essential building blocks for 5G infrastructure, aerospace and defense, automotive systems and advanced consumer electronics.

Overview

TagoreTech is seeking an experienced, innovation-driven Principal RF Design Engineer to join our elite RF engineering team. You will lead the creation of next-generation product technology for high-power radios used in military communications, cellular infrastructure, radar, unmanned aerial vehicles and medical applications. You will architect and design high-power RF switches, power amplifiers (PAs), low-noise amplifiers (LNAs) and integrated front-end modules (FEMs) in GaN and GaAs, taking products from concept through the lab and into production.

Key Responsibilities

• Lead the design and development of next-generation high-power RF front-end components: switches, PAs, LNAs and integrated FEMs.
• Architect future RF product concepts, and work with Marketing and Design Management to set product roadmaps and semiconductor process requirements.
• Drive IP development, circuit-level innovation and high-power package definition to meet thermal and electrical requirements.
• Perform transistor-level circuit design, non-linear simulation and optimization in Cadence Virtuoso, Keysight ADS or AWR Microwave Office.
• Run 2D and 3D EM modeling of chip layouts, package parasitics and board-level interactions to achieve tight model-to-measurement correlation.
• Lead lab characterization with the validation teams, verifying performance across power, frequency and temperature.
• Work with Product and Test Engineering to set production final test plans and specifications.
• Provide technical oversight, lead design reviews, and mentor junior and mid-level RF engineers.

Required Qualifications

• An MSEE with 15+ years, or a PhD with 10+ years, of hands-on RFIC/MMIC design experience.
• A proven track record in transistor-level design of high-power RF circuits in GaN or GaAs processes.
• Expert proficiency in Cadence, Keysight ADS or AWR MWO, including non-linear modeling and 2D/3D EM simulation tools such as HFSS or Sonnet.
• A strong understanding of device physics, linear and non-linear model translation, and physical implementation constraints.
• Practical experience with RF characterization and high-power lab equipment: VNAs, spectrum analyzers, power meters and load-pull systems.

Preferred Qualifications

• Design experience with RF SOI switches, PIN diode switches or high-efficiency GaN power amplifiers.
• A deep understanding of high-power thermal management and of co‑designing custom RF packages with their parasitics.

Success Traits

• A strong sense of ownership and the drive to see issues through to closure.
• The ability to explain complex technical tradeoffs to marketing partners, executive leadership and other non-technical stakeholders.
• Enjoyment of a fast-paced, innovation-focused environment where priorities change.
• Analytical thinking, a bias toward action, and a commitment to continuous improvement.
• A passion for mentoring and raising the technical bar across the team.

This position offers an exciting opportunity for professional growth in a fast-paced environment where innovation is encouraged. TagoreTech offers competitive compensation and benefits, and a collaborative culture where your designs directly shape next-generation wireless systems.

Job Type: Full-time
Work Location: Kolkata