GaN Intrinsic Reliability Lead - Power Semiconductors

Analog Devices, Inc.; Limerick; Vor Ort; EUR 120.000 - 190.000; Vollzeit

Zusammenfassung

Analog Devices is seeking a GaN Intrinsic Reliability Engineer to lead reliability characterization, modeling, and qualification for GaN and wide-bandgap devices (100V–650V). You will de-risk product development and influence the high-voltage roadmap across programs.

Based in the iRel group in Limerick, you will drive reliability strategy, define qualification methodologies, lead PoF investigations, and collaborate with design and product teams globally.

Qualifikationen

• PhD or MSc in Physics, Electrical Engineering, or Semiconductor Engineering.
• Typically 10+ years' experience in semiconductor reliability with significant GaN or WBG focus.

Aufgaben

• Drive GaN intrinsic reliability strategy across 100V-650V technologies, ensuring alignment with product roadmaps.
• Define and execute reliability qualification methodologies, including HTGB, HTRB, switching, and transient stress testing.
• Lead physics-of-failure (PoF) investigations, identifying degradation mechanisms and driving root-cause resolution.
• Develop and validate lifetime and reliability models (voltage, temperature, switching dependencies) for GaN devices.
• Drive product de-risking activities in collaboration with design and product teams, ensuring early reliability coverage.
• Provide technical leadership and decision-making authority on reliability risks, guardbands, and design recommendations.
• Develop and enhance intrinsic reliability test infrastructure, including ATE-based and custom stress systems.
• Define and advance next-generation reliability methodologies for GaN and wider WBG technologies (SiC, AlGaN, etc.).

Kenntnisse

GaN reliability

PoF investigations

Reliability modeling

Qualification methods

Leadership

Test infrastructure

Cross-functional

GaN/WBG

Ausbildung

PhD in Physics

MSc in Electrical Eng

Jobbeschreibung

Analog Devices is seeking a GaN Intrinsic Reliability Engineer to lead reliability characterization, modeling, and qualification for GaN and wide-bandgap devices (100V–650V). You will de-risk product development and influence the high-voltage roadmap across programs.

Based in the iRel group in Limerick, you will drive reliability strategy, define qualification methodologies, lead PoF investigations, and collaborate with design and product teams globally.