Stand out for this role — generate a tailored resume and cover letter in about a minute.
AIStorm is seeking a Senior TCAD Device Implementation Process Engineer in Hong Kong to collaborate with global teams and customers to implement run cards, characterize devices, and develop implant and fabrication schedules. You will translate TCAD results to fabrication processes and optimize devices with technicians and TEM support.
The ideal candidate has 5+ years of experience in device development with FinFETs and high‑voltage devices, and proficiency with Sentaurus, Silvaco, and Nuwa/Mozz
In this role you will work with AIStorm's engineers locally and internationally, as well as multinational corporate customers and world-class fabricators, to implement run cards, perform characterization, develop implant and fabrication schedules and generally to implement first-of-their-kind charge domain circuits which manipulate charge to implement leading edge AI, memory, sigma delta converters, SerDes, PLLs, and logic synthesis. The job will be to optimize and transfer devices and circuits using TCAD and to translate them to fabrication. Thereafter, you will evaluate and optimize the devices, with the help of technicians, TEM, probing, etc.
Implement run cards and perform characterization
Develop implant and fabrication schedules
Implement first of their kind charge domain circuits
Optimize and transfer devices and circuits using TCAD
Translate devices and circuits to fabrication
Evaluate and optimize devices with the help of technicians, TEM, probing, etc.
Experience developing multi-implant complex geometry structures using advanced and planar lithographies
Experience with FinFET devices including etches, halo implants, leakage optimization, fin shaping, thin film deposition, etc. in small lithography devices
Proficient in leading tools such as Sentaurus, Silvaco, Nuwa TCAD or Mozz TCAD or equivalent tools
Knowledge of unique structures such as BSI pixels, CCDs, thyristors, high-voltage semiconductor devices, RF devices or related developments
At least 5 years' experience developing devices with experience evaluating and validating resulting structures
AIStorm is pioneering the next generation of devices and circuits based upon charge domain technology. This includes AI, SRAM, DRAM, data converters, interfaces, logic circuits and timing circuits using charge domain circuits instead of transistors, resulting in up to 100x power savings and 30x reductions in size with a >2.5x performance improvement. AIStorm's patented technology allows significant power, size and performance benefits.