Senior Device Design Engineer

L&T Semiconductor Technologies; München; On-site; EUR 90,000 - 130,000; Full time

Job summary

L&T Semiconductor Technologies in Munich, Germany is seeking a senior engineer to lead the design and optimization of SiC MOSFETs and GaN power devices for automotive and industrial applications. You will drive device architectures, perform TCAD-driven calibration, and collaborate with cross‑functional teams.

The role emphasizes reliability, thermal management, and manufacturability, with opportunities to publish research and contribute to IP while mentoring junior engineers.

Qualifications

• MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or a related discipline.
• 6–10 years of experience in power semiconductor device design.
• Strong expertise in SiC MOSFETs, SiC diodes, GaN HEMTs, or advanced silicon power devices.
• Advanced knowledge of semiconductor device physics and wide bandgap materials.
• Expert-level experience with TCAD simulation and model calibration.
• Experience in device layout development and mask design.
• Strong understanding of silicon correlation and electrical characterization.
• Knowledge of reliability mechanisms including TDDB, HTRB, HTGB, HTOL, UIS, avalanche, and short-circuit ruggedness.
• Experience in JMP, Minitab, or other statistical tools.
• Familiarity with JEDEC and AEC-Q101 qualification standards.
• Experience collaborating with external foundries are desirable.

Responsibilities

• Lead the design and optimization of next-generation SiC MOSFETs and GaN power devices for automotive and industrial applications.
• Benchmark critical design parameters across voltage nodes.
• Research and evaluate novel architectures to improve performance and reliability.
• Define device architectures to meet electrical, thermal, reliability, and cost targets.
• Support TCAD process and device simulation model calibration using experimental data.
• Design reliable edge termination structures for high and ultra-high voltage applications.
• Lead prototype evaluation, electrical characterization, and silicon debugging with Failure Analysis and Reliability teams.
• Optimize device designs considering process variation, manufacturability, and long-term reliability.
• Collaborate with Process Integration, Product Engineering, Reliability, and external foundry teams.
• Support IP generation, technical report writing, and research publications.
• Provide technical guidance to junior engineers and review deliverables.
• Communicate complex ideas clearly to cross-functional and leadership teams.

Skills

Power semiconductors

SiC MOSFETs

GaN HEMTs

Device physics

Wide bandgap materials

TCAD simulation

Statistical tools

JMP

Minitab

External foundry collaboration

Education

MS/PhD in Electrical Engineering

Tools

TCAD

Device layout

Mask design

Job description

• Lead the design and optimization of next-generation SiC MOSFETs and GaN power devices for automotive and industrial applications.


• Benchmarking of critical design parameters in and across the voltage nodes.


• Research and evaluate novel architectures to improve performance and reliability.


• Define device architectures to achieve electrical, thermal, reliability, and cost targets.


• Support development and calibration of TCAD process and device simulation models using experimental characterization data.


• Design reliable edge termination structures for high and ultra-high voltage applications.


• Lead prototype evaluation, electrical characterization, and silicon debug activities in collaboration with Failure Analysis and Reliability teams.


• Optimize device designs considering process variation, manufacturability, and long-term reliability.


• Collaborate with Process Integration, Product Engineering, Reliability, and external foundry teams throughout product development.


• Support in IP generations, technical report writing, and research publications.


• Provide technical guidance to junior engineers and review technical deliverables.


• Clear communication of complex technological ideas to cross functional and leadership teams.

Requirements

• MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or a related discipline.


• 6–10 years of experience in power semiconductor device design.


• Strong expertise in SiC MOSFETs, SiC diodes, GaN HEMTs, or advanced silicon power devices.


• Advanced knowledge of semiconductor device physics and wide bandgap materials.


• Expert-level experience with TCAD simulation and model calibration.


• Experience in device layout development and mask design.


• Strong understanding of silicon correlation and electrical characterization.


• Knowledge of reliability mechanisms including TDDB, HTRB, HTGB, HTOL, UIS, avalanche, and short-circuit ruggedness.


• Experience in JMP, Minitab, or other statistical tools.


• Familiarity with JEDEC and AEC-Q101 qualification standards.


• Experience collaborating with external foundries are desirable.

Patent contributions or published technical work are desirable