Epitaxy Researcher: Dopant Control & Device Integration

Imec; Vlaams-Brabant; On-site; EUR 70,000 - 95,000; Full time

Job summary

Imec in Leuven, Belgium, invites a Researcher to lead epitaxial growth projects within the EPI group. You will design, execute, and analyze experiments on 300 mm wafers, optimizing dopant incorporation and activation to achieve desired electrical properties.

You will collaborate across device integration, process and characterization teams, transfer processes to Fab Engineering, and explore new materials and doping concepts, reporting at conferences and contributing to IP.

Qualifications

• Hold a PhD in a related field (Materials Science, Physics or Electrical Engineering).
• Hands-on experience with semiconductor epitaxy, preferably RP-CVD growth of Si/SiGe/Ge or related materials.
• Strong understanding of solid-state physics, material science and doping technologies.
• Ability to correlate experimental plans, processes, and electrical properties.
• Collaborate with equipment suppliers, process, integration, device and characterization teams.
• Strong analytical and problem-solving mindset with independent work and clear communication.

Responsibilities

• Develop processes for doped epitaxial materials and optimize dopant activation and electrical properties.
• Integrate selective epitaxial growth into device flows and evaluate interactions with upstream/downstream steps.
• Ensure process readiness and robustness for transfers to Fab Engineering or external partners.
• Explore new epitaxial materials, precursors and doping concepts.
• Present work at conferences, publish results, and contribute to IP.

Skills

PhD required

Epitaxy experience

RP-CVD growth

Solid-state physics

Experiment design

Data analysis

Scientific communication

Education

PhD in Materials Science or Physics or Electrical Engineering

Tools

RP-CVD equipment

Job description

Imec in Leuven, Belgium, invites a Researcher to lead epitaxial growth projects within the EPI group. You will design, execute, and analyze experiments on 300 mm wafers, optimizing dopant incorporation and activation to achieve desired electrical properties.

You will collaborate across device integration, process and characterization teams, transfer processes to Fab Engineering, and explore new materials and doping concepts, reporting at conferences and contributing to IP.