Staff Engineer GaN Technology Development (f/m/div)

Infineon Technologies AG

Villach

On-site

EUR 90,000 - 140,000

Full time

14 days+

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Job summary

Infineon Technologies AG is seeking a Staff Engineer for GaN Technology Development to join a world-class team shaping next-generation GaN power platforms. You will own key process blocks, run DOE-based experiments, and define the POR to deliver robust manufacturing and measurable performance improvements.

The ideal candidate has a technical university degree (master or PhD) and 3+ years in technology development or related fields, with strong semiconductor physics knowledge and experience in

Qualifications

  • Technical university degree (master or PhD) in Electrical Engineering, Microelectronics, Physics, Materials Science or similar.
  • 3+ years of relevant industry experience in technology development, process integration, power semiconductors or wide-bandgap technologies.
  • Solid understanding of semiconductor device physics (GaN and HEMT structures a strong plus).
  • Experience in DOE and statistical analysis.
  • A structured, analytical problem-solving approach and ownership mindset.
  • Fluent English; German (or motivation to learn) is an advantage.

Responsibilities

  • Advance today’s GaN technology nodes and develop next-generation GaN power platforms.
  • Own key process blocks end-to-end – drive proof of concept, initial setup, optimization, stability, and measurable performance gains.
  • Define, establish, and maintain the Process of Record (POR) to ensure robust, scalable manufacturing.
  • Plan and run experiments using DOE methodologies, then execute, analyze and document the results.
  • Perform statistical analysis and derive actionable conclusions.
  • Support root-cause investigations for stability and reliability issues.

Skills

DOE and statistical analysis
Analytical problem solving
Ownership mindset
Fluent English

Education

Master's degree in Electrical Eng./Microelectronics/Physics
PhD in Electrical Eng./Microelectronics/Physics

Job description

#WeAreIn for jobs that impact everyone's life. Join the thinkers, builders, and problem-solvers behind tomorrow’s technology. As Staff Engineer for GaN Technology Development, you’ll have the opportunity to merge creativity with your technical expertise by shaping the future of technology, driving groundbreaking projects, and bringing new ideas to life. Are you in?

Key responsibilities

In this role, you will join a world-class GaN technology development team with a global footprint—shaping next-generation GaN power platforms that make power conversion more efficient, smaller, and more sustainable, and turning leading-edge innovation into real products that reduce energy loss across applications.

  • Advance today’s GaN technology nodes and develop next-generation GaN power platforms
  • Own key process blocks end-to-end – drive proof of concept, initial setup, optimization, stability, and measurable performance gains
  • Define, establish, and maintain the Process of Record (POR) to ensure robust, scalable manufacturing
  • Plan and run experiments using DOE methodologies, then execute, analyze and document the results
  • Perform statistical analysis and derive actionable conclusions
  • Support root-cause investigations for stability and reliability issues
Qualifications and skills to help you succeed
  • Technical university degree (master or PhD) in Electrical Engineering, Microelectronics, Physics, Materials Science or similar
  • 3+ years of relevant industry experience, ideally in technology development, process integration, power semiconductors or wide-bandgap technologies
  • Solid understanding of semiconductor device physics (experience with GaN and HEMT structures is a strong plus)
  • Experience in DOE and statistical analysis
  • A structured, analytical problem-solving approach and ownership mindset
  • Fluent English; German (or motivation to learn) is an advantage
Compensation

We offer competitive salaries and additional benefits based on your performance, experience and qualification. The employment is in accordance with the collective salary and wage agreement for employees of the electrical and electronics industry, employment group G (https://www.feei.at/aktuelles/mindestloehne-und-gehaelter-eei/). The monthly salary is paid 14 times p.a. We offer a higher compensation depending on your expertise and skills.

Company culture and values

#WeAreIn for driving decarbonization and digitalization. As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener. Are you in? We are on a journey to create the best Infineon for everyone. We strive to create the best Infineon for everyone by embracing diversity and inclusion.

We welcome applicants for who they are and offer a workplace built on trust, openness, respect and equal opportunity.

Please let your recruiter know if you need any accommodations during the interview process. Learn more about our various contact channels and about Diversity & Inclusion at Infineon.

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